-
Part Symbol
-
Footprint
-
3D Model
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
Power Field-Effect Transistor,
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
R6509KNXC7G by ROHM Semiconductor is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
74AJ1409
|
Newark | Mosfet Single, 9A, 650V, 48W Rohs Compliant: Yes |Rohm R6509KNXC7G RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 0 |
|
$1.2700 / $2.8900 | Buy Now |
DISTI #
846-R6509KNXC7G-ND
|
DigiKey | 650V 9A TO-220FM, HIGH-SPEED SWI Min Qty: 1 Lead time: 18 Weeks Container: Tube |
3990 In Stock |
|
$1.0875 / $3.4000 | Buy Now |
DISTI #
755-R6509KNXC7G
|
Mouser Electronics | MOSFETs TO220 650V 9A N-CH MOSFET RoHS: Compliant | 3953 |
|
$1.2200 / $3.0600 | Buy Now |
|
Future Electronics | RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Lead time: 18 Weeks Container: Tube |
0 Tube |
|
$1.3200 | Buy Now |
DISTI #
67543705
|
Verical | Trans MOSFET N-CH 650V 9A 3-Pin(3+Tab) TO-220FM Tube RoHS: Compliant Min Qty: 66 Package Multiple: 1 Date Code: 2201 | Americas - 1000 |
|
$1.1225 / $1.3128 | Buy Now |
DISTI #
60671175
|
Verical | Trans MOSFET N-CH 650V 9A 3-Pin(3+Tab) TO-220FM Tube RoHS: Compliant Min Qty: 9 Package Multiple: 1 Date Code: 1923 | Americas - 200 |
|
$1.6000 / $3.5125 | Buy Now |
|
Quest Components | 800 |
|
$1.1864 / $2.8760 | Buy Now | |
DISTI #
R6509KNXC7G
|
TME | Transistor: N-MOSFET, unipolar, 650V, 9A, Idm: 27A, 48W, TO220FP Min Qty: 1 | 0 |
|
$1.0900 / $1.6800 | RFQ |
|
Ameya Holding Limited | Min Qty: 1 | 50-Authorized Distributor |
|
$1.2600 / $3.8109 | Buy Now |
DISTI #
R6509KNXC7G
|
Avnet Silica | Power MOSFET, N Channel, 650 V, 9 A, 0.53 ohm, TO-220FM, Through Hole (Alt: R6509KNXC7G) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 22 Weeks, 0 Days | Silica - 0 |
|
Buy Now |
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
|
R6509KNXC7G
ROHM Semiconductor
Buy Now
Datasheet
|
Compare Parts:
R6509KNXC7G
ROHM Semiconductor
Power Field-Effect Transistor,
Select a part to compare: |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | ROHM CO LTD | |
Package Description | TO-220FM, 3 PIN | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | ROHM Semiconductor | |
Avalanche Energy Rating (Eas) | 158 mJ | |
Case Connection | ISOLATED | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 600 V | |
Drain Current-Max (ID) | 9 A | |
Drain-source On Resistance-Max | 0.585 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 25 pF | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 48 W | |
Pulsed Drain Current-Max (IDM) | 27 A | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |