Datasheets
R6509KNXC7G by: ROHM Semiconductor

Power Field-Effect Transistor,

Part Details for R6509KNXC7G by ROHM Semiconductor

Results Overview of R6509KNXC7G by ROHM Semiconductor

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R6509KNXC7G Information

R6509KNXC7G by ROHM Semiconductor is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for R6509KNXC7G

Part # Distributor Description Stock Price Buy
DISTI # 74AJ1409
Newark Mosfet Single, 9A, 650V, 48W Rohs Compliant: Yes |Rohm R6509KNXC7G RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 0
  • 1 $2.8900
  • 10 $2.1800
  • 100 $1.4700
  • 500 $1.3100
  • 1,000 $1.2700
$1.2700 / $2.8900 Buy Now
DISTI # 846-R6509KNXC7G-ND
DigiKey 650V 9A TO-220FM, HIGH-SPEED SWI Min Qty: 1 Lead time: 18 Weeks Container: Tube 3990
In Stock
  • 1 $3.4000
  • 50 $1.7088
  • 100 $1.5445
  • 500 $1.2565
  • 1,000 $1.1640
  • 2,000 $1.0875
$1.0875 / $3.4000 Buy Now
DISTI # 755-R6509KNXC7G
Mouser Electronics MOSFETs TO220 650V 9A N-CH MOSFET RoHS: Compliant 3953
  • 1 $3.0600
  • 50 $1.6100
  • 100 $1.4800
  • 250 $1.4700
  • 500 $1.2600
  • 1,000 $1.2200
$1.2200 / $3.0600 Buy Now
Future Electronics   RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Lead time: 18 Weeks Container: Tube 0
Tube
  • 1,000 $1.3200
$1.3200 Buy Now
DISTI # 67543705
Verical Trans MOSFET N-CH 650V 9A 3-Pin(3+Tab) TO-220FM Tube RoHS: Compliant Min Qty: 66 Package Multiple: 1 Date Code: 2201 Americas - 1000
  • 66 $1.3128
  • 100 $1.2541
  • 250 $1.2038
  • 500 $1.1604
  • 1,000 $1.1225
$1.1225 / $1.3128 Buy Now
DISTI # 60671175
Verical Trans MOSFET N-CH 650V 9A 3-Pin(3+Tab) TO-220FM Tube RoHS: Compliant Min Qty: 9 Package Multiple: 1 Date Code: 1923 Americas - 200
  • 9 $3.5125
  • 14 $2.3375
  • 50 $1.8500
  • 100 $1.7000
  • 200 $1.6000
$1.6000 / $3.5125 Buy Now
Quest Components   800
  • 1 $2.8760
  • 210 $1.3302
  • 452 $1.1864
$1.1864 / $2.8760 Buy Now
DISTI # R6509KNXC7G
TME Transistor: N-MOSFET, unipolar, 650V, 9A, Idm: 27A, 48W, TO220FP Min Qty: 1 0
  • 1 $1.6800
  • 10 $1.4800
  • 50 $1.3500
  • 100 $1.2800
  • 500 $1.1400
  • 1,000 $1.0900
$1.0900 / $1.6800 RFQ
Ameya Holding Limited   Min Qty: 1 50-Authorized Distributor
  • 1 $3.8109
  • 10 $2.8200
  • 50 $2.5400
  • 100 $2.0400
  • 500 $1.6800
  • 1,000 $1.3800
  • 2,000 $1.2600
$1.2600 / $3.8109 Buy Now
DISTI # R6509KNXC7G
Avnet Silica Power MOSFET, N Channel, 650 V, 9 A, 0.53 ohm, TO-220FM, Through Hole (Alt: R6509KNXC7G) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 22 Weeks, 0 Days Silica - 0
Buy Now
DISTI # C1S625902038164
Chip One Stop 650V 9A TO-220FM, High-speed switching Power MOSFET RoHS: Not Compliant pbFree: No Container: Tube 200
  • 1 $2.8100
  • 10 $1.8700
  • 50 $1.4800
  • 100 $1.3600
  • 200 $1.2800
$1.2800 / $2.8100 Buy Now

Part Details for R6509KNXC7G

R6509KNXC7G CAD Models

R6509KNXC7G Part Data Attributes

R6509KNXC7G ROHM Semiconductor
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R6509KNXC7G ROHM Semiconductor Power Field-Effect Transistor,
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Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ROHM CO LTD
Package Description TO-220FM, 3 PIN
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer ROHM Semiconductor
Avalanche Energy Rating (Eas) 158 mJ
Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 9 A
Drain-source On Resistance-Max 0.585 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 25 pF
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 48 W
Pulsed Drain Current-Max (IDM) 27 A
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

R6509KNXC7G Frequently Asked Questions (FAQ)

  • ROHM recommends a thermal pad on the bottom of the package, connected to a large copper area on the PCB to dissipate heat efficiently. A minimum of 2oz copper thickness is recommended.

  • To ensure stable output voltage regulation, it's essential to follow the recommended input and output capacitor values, and to decouple the input voltage with a capacitor. Additionally, the output voltage should be monitored and adjusted as needed to prevent oscillations.

  • The maximum allowable ripple voltage on the input is 1Vp-p, but it's recommended to keep it below 0.5Vp-p to ensure stable operation and minimize output voltage ripple.

  • The R6509KNXC7G is rated for operation up to 105°C, but it's essential to consider the derating curves and thermal management to ensure reliable operation in high-temperature environments.

  • The R6509KNXC7G has built-in overcurrent protection, but it's recommended to add external protection, such as a fuse or a current-limiting resistor, to prevent damage from excessive current or short-circuit conditions.