Datasheets
R6055VNXC7G by: ROHM Semiconductor

Power Field-Effect Transistor, 23A I(D), 600V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220FM, 3 PIN

Part Details for R6055VNXC7G by ROHM Semiconductor

Overview of R6055VNXC7G by ROHM Semiconductor

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for R6055VNXC7G

Part # Distributor Description Stock Price Buy
DISTI # 67AK5223
Newark Mosfet, N-Ch, 600V, 23A, To-220Fm Rohs Compliant: Yes |Rohm R6055VNXC7G RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 94
  • 1 $9.5100
  • 10 $8.6700
  • 25 $8.4800
  • 50 $8.2900
  • 100 $7.3000
  • 250 $7.0000
  • 500 $6.4500
$6.4500 / $9.5100 Buy Now
DISTI # 846-R6055VNXC7G-ND
DigiKey 600V 23A TO-220FM, PRESTOMOS WIT Min Qty: 1 Lead time: 18 Weeks Container: Tube 1013
In Stock
  • 1 $4.3000
  • 10 $2.9030
  • 50 $2.3180
  • 100 $2.2564
$2.2564 / $4.3000 Buy Now
DISTI # R6055VNXC7G
Avnet Americas Power MOSFET, N Channel, 600 V, 23 A, 71 Milliohms, TO-220FM, 3 Pins, Through Hole - Rail/Tube (Alt: R6055VNXC7G) Min Qty: 1000 Package Multiple: 1000 Container: Tube 0
  • 1,000 $5.1918
  • 2,000 $5.0866
  • 4,000 $4.9814
  • 6,000 $4.8761
  • 8,000 $4.7709
  • 10,000 $4.6656
  • 100,000 $4.5604
$4.5604 / $5.1918 Buy Now
DISTI # 755-R6055VNXC7G
Mouser Electronics MOSFETs TO220 650V 165A N-CH MOSFET RoHS: Compliant 2096
  • 1 $4.3000
  • 250 $4.2100
$4.2100 / $4.3000 Buy Now
Future Electronics   RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Lead time: 18 Weeks Container: Tube 0
Tube
  • 1,000 $4.6200
$4.6200 Buy Now
DISTI # 65050024
Verical Trans MOSFET N-CH 600V 23A 3-Pin(3+Tab) TO-220FM Tube RoHS: Compliant Min Qty: 16 Package Multiple: 1 Americas - 100
  • 16 $4.9654
  • 25 $4.7520
  • 50 $4.5710
  • 100 $4.4159
$4.4159 / $4.9654 Buy Now
DISTI # 66363613
Verical Trans MOSFET N-CH 600V 23A 3-Pin(3+Tab) TO-220FM Tube RoHS: Compliant Min Qty: 9 Package Multiple: 1 Americas - 90
  • 9 $3.6250
  • 10 $3.2250
  • 50 $3.0625
$3.0625 / $3.6250 Buy Now
Quest Components   80
  • 1 $9.4590
  • 12 $6.3060
  • 41 $5.8331
$5.8331 / $9.4590 Buy Now
DISTI # R6055VNXC7G
TTI MOSFETs TO220 650V 165A N-CH MOSFET RoHS: Compliant pbFree: Pb-Free Min Qty: 1000 Package Multiple: 1000 Container: Tube Americas - 0
  • 1,000 $4.7300
$4.7300 Buy Now
Ameya Holding Limited   Min Qty: 1 100-Authorized Distributor
  • 1 $9.1800
  • 10 $8.3000
  • 50 $7.9000
  • 100 $6.8600
  • 500 $5.9800
  • 1,000 $5.0800
$5.0800 / $9.1800 Buy Now
DISTI # C1S625903757682
Chip1Stop MOSFET RoHS: Compliant pbFree: Yes 1000
  • 10 $4.2100
  • 30 $4.0100
  • 50 $3.8300
  • 100 $3.4200
  • 250 $3.2100
  • 500 $3.1300
  • 1,000 $3.0500
$3.0500 / $4.2100 Buy Now
DISTI # C1S625902347266
Chip1Stop MOSFET RoHS: Compliant pbFree: Yes Container: Tube 90
  • 1 $2.9000
  • 10 $2.5800
  • 50 $2.4500
$2.4500 / $2.9000 Buy Now
CoreStaff Co Ltd RoHS(Ship within 1day) - D/C 100
  • 1 $4.5360
  • 10 $3.8560
  • 50 $3.4020
  • 100 $3.2660
  • 500 $3.2210
  • 1,000 $3.1530
$3.1530 / $4.5360 Buy Now

Part Details for R6055VNXC7G

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R6055VNXC7G Part Data Attributes

R6055VNXC7G ROHM Semiconductor
Buy Now Datasheet
Compare Parts:
R6055VNXC7G ROHM Semiconductor Power Field-Effect Transistor, 23A I(D), 600V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220FM, 3 PIN
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ROHM CO LTD
Package Description TO-220FM, 3 PIN
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer ROHM Semiconductor
Avalanche Energy Rating (Eas) 233 mJ
Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 23 A
Drain-source On Resistance-Max 0.08 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 100 W
Pulsed Drain Current-Max (IDM) 165 A
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

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