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Transistors / Power Field-Effect Transistors / R6020KNJTL
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R6020KNJTL by: ROHM Semiconductor

Power Field-Effect Transistor,

Part Details for R6020KNJTL by ROHM Semiconductor

Overview of R6020KNJTL by ROHM Semiconductor

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Price & Stock for R6020KNJTL

Part # Distributor Description Stock Price Buy
DISTI # 38AH5899
Newark Mosfet, N-Ch, 600V, 20A, 150Deg C, 231W, Transistor Polarity:N Channel, Continuous Drain Current Id:20A, Drain Source Voltage Vds:600V, On Resistance Rds(On):0.17Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:5V, Power Rohs Compliant: Yes |Rohm R6020KNJTL Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape 896
  • 1 $3.4900
  • 10 $3.0900
  • 25 $2.9100
  • 50 $2.7400
  • 100 $2.5500
  • 250 $2.3500
  • 500 $2.2800
$2.2800 / $3.4900 Buy Now
DISTI # R6020KNJTLCT-ND
DigiKey MOSFET N-CH 600V 20A LPTS Min Qty: 1 Lead time: 23 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 3499
In Stock
  • 1 $3.3600
  • 10 $2.8180
  • 100 $2.2798
  • 500 $2.0265
  • 1,000 $1.7352
  • 2,000 $1.6338
  • 5,000 $1.5675
$1.5675 / $3.3600 Buy Now
DISTI # R6020KNJTL
Avnet Americas Transistor MOSFET N-CH 600V 20A 3-Pin TO-263S Emboss T/R - Tape and Reel (Alt: R6020KNJTL) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 23 Weeks, 0 Days Container: Reel 0
  • 1,000 $1.8559
  • 2,000 $1.8183
  • 4,000 $1.7807
  • 6,000 $1.7431
  • 8,000 $1.7054
  • 10,000 $1.6678
  • 100,000 $1.6302
$1.6302 / $1.8559 Buy Now
DISTI # 755-R6020KNJTL
Mouser Electronics MOSFET Nch 600V 20A Si MOSFET RoHS: Compliant 1025
  • 1 $3.3600
  • 10 $2.8200
  • 100 $2.2800
  • 500 $2.0300
  • 1,000 $1.7300
  • 2,000 $1.6300
  • 5,000 $1.5600
$1.5600 / $3.3600 Buy Now
Future Electronics MOSFET Nch 600V 20A Si MOSFET RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Container: Reel 0
Reel
  • 1,000 $1.9000
  • 2,000 $1.8500
$1.8500 / $1.9000 Buy Now
Quest Components   58
  • 1 $5.6430
  • 6 $4.1382
  • 19 $3.7620
$3.7620 / $5.6430 Buy Now
Ameya Holding Limited NCH 600V 20A POWER MOSFET Min Qty: 1 60-Authorized Distributor
  • 1 $4.3193
  • 10 $4.0652
  • 25 $3.8112
  • 100 $3.5571
  • 250 $3.3030
  • 300 $3.0489
  • 500 $2.7949
  • 1,000 $2.5408
$2.5408 / $4.3193 Buy Now
DISTI # R6020KNJTL
Avnet Asia Transistor MOSFET N-CH 600V 20A 3-Pin TO-263S Emboss T/R (Alt: R6020KNJTL) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 24 Weeks, 0 Days 0
RFQ
DISTI # R6020KNJTL
Avnet Silica Transistor MOSFET N-CH 600V 20A 3-Pin TO-263S Emboss T/R (Alt: R6020KNJTL) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 26 Weeks, 0 Days Silica - 0
Buy Now
CoreStaff Co Ltd RoHS(Ship within 1day) - D/C 2017 Date Code: 2017 73
  • 1 $2.8580
  • 10 $2.3970
  • 50 $2.1200
  • 100 $1.8880
  • 500 $1.8860
  • 1,000 $1.8810
$1.8810 / $2.8580 Buy Now
LCSC 600V 20A 231W 196m9.5A10V 5V1mA 1PCSNChannel TO-263 MOSFETs ROHS 88
  • 1 $2.2036
  • 10 $2.0929
  • 30 $2.0280
  • 100 $1.9614
  • 500 $1.9302
  • 1,000 $1.9164
$1.9164 / $2.2036 Buy Now

Part Details for R6020KNJTL

R6020KNJTL CAD Models

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R6020KNJTL Part Data Attributes:

Parametric Data
R6020KNJTL ROHM Semiconductor
Buy Now Datasheet
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R6020KNJTL ROHM Semiconductor Power Field-Effect Transistor,
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ROHM CO LTD
Package Description TO-263, SC-83, D2PAK-3/2
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 23 Weeks
Samacsys Manufacturer ROHM Semiconductor
Avalanche Energy Rating (Eas) 418 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 20 A
Drain-source On Resistance-Max 0.196 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e2
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 60 A
Surface Mount YES
Terminal Finish Tin/Copper (Sn/Cu)
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 10
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for R6020KNJTL

This table gives cross-reference parts and alternative options found for R6020KNJTL. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of R6020KNJTL, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
APT20N60KC3 Power Field-Effect Transistor, 20.7A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AC, 3 PIN Advanced Power Technology R6020KNJTL vs APT20N60KC3
STB28N65M2 N-channel 650 V, 0.15 Ohm typ., 20 A MDmesh M2 Power MOSFET in D2PAK package STMicroelectronics R6020KNJTL vs STB28N65M2
R6020ENJTL Power Field-Effect Transistor, 20A I(D), 600V, 0.196ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, LPTS, SC-83, 3/2 PIN ROHM Semiconductor R6020KNJTL vs R6020ENJTL
IXKP20N60C5 Power Field-Effect Transistor, Littelfuse Inc R6020KNJTL vs IXKP20N60C5
RJK60S5DPK-M0-T0 20A, 600V, 0.178ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3PSG, 3 PIN Renesas Electronics Corporation R6020KNJTL vs RJK60S5DPK-M0-T0
IXKP20N60C5 Power Field-Effect Transistor, 20A I(D), 600V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN IXYS Corporation R6020KNJTL vs IXKP20N60C5
IPB60R190C6XT Power Field-Effect Transistor, 20.2A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN Infineon Technologies AG R6020KNJTL vs IPB60R190C6XT
SPP20N60S5HKSA1 Power Field-Effect Transistor, 20A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, PLASTIC, TO-220, 3 PIN Infineon Technologies AG R6020KNJTL vs SPP20N60S5HKSA1
SIHH21N65EF-T1-GE3 Power Field-Effect Transistor, 19.8A I(D), 650V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 8 X 8 MM, HALOGEN FREE AND ROHS COMPLIANT, POWERPAK-4 Vishay Intertechnologies R6020KNJTL vs SIHH21N65EF-T1-GE3
TK20E60U TRANSISTOR POWER, FET, FET General Purpose Power Toshiba America Electronic Components R6020KNJTL vs TK20E60U

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