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Power Field-Effect Transistor,
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
99Y2393
|
Newark | Mosfet, N-Ch, 600V, 11A, To-220Fm, Transistor Polarity:N Channel, Continuous Drain Current Id:11A, Drain Source Voltage Vds:600V, On Resistance Rds(On):0.34Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:5V, Power Rohs Compliant: Yes |Rohm R6011KNX Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 961 |
|
$0.8510 / $1.9700 | Buy Now |
DISTI #
R6011KNX-ND
|
DigiKey | MOSFET N-CH 600V 11A TO220FM Min Qty: 1 Lead time: 18 Weeks Container: Bulk |
396 In Stock |
|
$0.7912 / $1.3300 | Buy Now |
DISTI #
R6011KNX
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Avnet Americas | Transistor MOSFET N-CH 600V 11A 3-Pin TO-220FM Bulk - Bulk (Alt: R6011KNX) RoHS: Compliant Min Qty: 500 Package Multiple: 500 Container: Bulk | 0 |
|
$0.8229 / $0.9368 | Buy Now |
DISTI #
755-R6011KNX
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Mouser Electronics | MOSFET Nch 600V 11A Si MOSFET RoHS: Compliant | 410 |
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$0.7910 / $1.3300 | Buy Now |
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Future Electronics | N-Channel 600 V 11 A 390 mOhm 53 W Through Hole Power MOSFET - TO-220 RoHS: Compliant pbFree: Yes Min Qty: 100 Package Multiple: 100 Lead time: 18 Weeks Container: Bag | 0Bag |
|
$0.7750 / $0.8950 | Buy Now |
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Ameya Holding Limited | MOSFET N-CH 600V 11A TO220FM Min Qty: 1 | 12-Authorized Distributor |
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$1.1175 / $1.6763 | Buy Now |
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R6011KNX
ROHM Semiconductor
Buy Now
Datasheet
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Compare Parts:
R6011KNX
ROHM Semiconductor
Power Field-Effect Transistor,
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | ROHM CO LTD | |
Package Description | TO-220FM, 3 PIN | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | ROHM Semiconductor | |
Avalanche Energy Rating (Eas) | 210 mJ | |
Case Connection | ISOLATED | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 600 V | |
Drain Current-Max (ID) | 11 A | |
Drain-source On Resistance-Max | 0.39 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 33 A | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 10 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |