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Transistors / Power Field-Effect Transistors / R6009JNJGTL
Datasheets
R6009JNJGTL by: ROHM Semiconductor

Power Field-Effect Transistor, 9A I(D), 600V, 0.585ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-263AB, SC-83, TO-263S, D2PAK-3/2

Part Details for R6009JNJGTL by ROHM Semiconductor

Overview of R6009JNJGTL by ROHM Semiconductor

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Price & Stock for R6009JNJGTL

Part # Distributor Description Stock Price Buy
DISTI # 01AH7809
Newark Mosfet, N-Ch, 9A, 600V, To-263S, Transistor Polarity:N Channel, Continuous Drain Current Id:9A, Drain Source Voltage Vds:600V, On Resistance Rds(On):0.45Ohm, Rds(On) Test Voltage Vgs:15V, Threshold Voltage Vgs:6V, Power Dissipation Rohs Compliant: Yes |Rohm R6009JNJGTL RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape 87
  • 1 $2.9100
  • 10 $2.4400
  • 25 $2.2900
  • 50 $2.1300
  • 100 $1.9800
  • 250 $1.8700
  • 500 $1.7600
$1.7600 / $2.9100 Buy Now
DISTI # R6009JNJGTLCT-ND
DigiKey MOSFET N-CH 600V 9A LPTS Min Qty: 1 Lead time: 23 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) 3000
In Stock
  • 1 $3.9000
  • 10 $2.5580
  • 100 $1.7955
  • 500 $1.4699
  • 1,000 $1.3088
$1.3088 / $3.9000 Buy Now
DISTI # R6009JNJGTL
Avnet Americas Transistor MOSFET N-CH 600V 9A 3-Pin TO-263S Emboss T/R - Tape and Reel (Alt: R6009JNJGTL) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Container: Reel 0
RFQ
DISTI # 755-R6009JNJGTL
Mouser Electronics MOSFETs R6009JNJ is a power MOSFET with low on-resistance and fast switching, suitable for the switching application. RoHS: Compliant 995
  • 1 $2.8000
  • 10 $2.2400
  • 25 $2.2100
  • 100 $1.6300
  • 500 $1.3600
  • 1,000 $1.3000
$1.3000 / $2.8000 Buy Now
Future Electronics   RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Lead time: 18 Weeks Container: Reel 0
Reel
  • 1,000 $1.3800
$1.3800 Buy Now
DISTI # 36532413
Verical Trans MOSFET N-CH 600V 9A 3-Pin(2+Tab) LPTS T/R Min Qty: 44 Package Multiple: 1 Americas - 100
  • 44 $1.7513
  • 50 $1.6846
  • 100 $1.6274
$1.6274 / $1.7513 Buy Now
DISTI # 36564822
Verical Trans MOSFET N-CH 600V 9A 3-Pin(2+Tab) LPTS T/R Min Qty: 44 Package Multiple: 1 Date Code: 1901 Americas - 100
  • 44 $1.7513
  • 50 $1.6846
  • 100 $1.6274
$1.6274 / $1.7513 Buy Now
DISTI # 82120031
Verical Trans MOSFET N-CH 600V 9A 3-Pin(2+Tab) LPTS T/R Min Qty: 17 Package Multiple: 1 Date Code: 1940 Americas - 95
  • 17 $1.9125
  • 50 $0.9775
$0.9775 / $1.9125 Buy Now
Quest Components   160
  • 1 $3.1320
  • 34 $2.0880
  • 121 $1.9314
$1.9314 / $3.1320 Buy Now
DISTI # R6009JNJGTL
TME Transistor: N-MOSFET, unipolar, 600V, 9A, Idm: 27A, 125W, D2PAK Min Qty: 1 0
  • 1 $2.5900
  • 10 $2.0200
  • 50 $1.6100
  • 100 $1.4700
  • 250 $1.3700
  • 500 $1.2200
  • 1,000 $1.2000
$1.2000 / $2.5900 RFQ
Ameya Holding Limited Transistors FETs, MOSFETs Single Min Qty: 1 100-Authorized Distributor
  • 1 $2.9100
  • 10 $2.6200
  • 100 $2.1500
  • 500 $1.8300
  • 1,000 $1.5400
$1.5400 / $2.9100 Buy Now
DISTI # R6009JNJGTL
Avnet Silica Transistor MOSFET N-CH 600V 9A 3-Pin TO-263S Emboss T/R (Alt: R6009JNJGTL) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 22 Weeks, 0 Days Silica - 0
Buy Now
DISTI # C1S625901816422
Chip1Stop MOSFET RoHS: Compliant pbFree: Yes Container: Cut Tape 95
  • 1 $1.8200
  • 10 $1.4500
  • 50 $0.8190
$0.8190 / $1.8200 Buy Now
CoreStaff Co Ltd RoHS(Ship within 1day) - D/C 100
  • 1 $1.7970
  • 10 $1.4730
  • 50 $1.2230
  • 100 $1.1620
  • 500 $1.0820
  • 1,000 $1.0440
$1.0440 / $1.7970 Buy Now
CoreStaff Co Ltd RoHS(Ship within 1day) - D/C 2019 Date Code: 2019 100
  • 1 $1.7970
  • 10 $1.4730
  • 50 $1.2230
  • 100 $1.1620
  • 500 $1.0820
  • 1,000 $1.0440
$1.0440 / $1.7970 Buy Now

Part Details for R6009JNJGTL

R6009JNJGTL CAD Models

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R6009JNJGTL Part Data Attributes

Parametric Data
R6009JNJGTL ROHM Semiconductor
Buy Now Datasheet
Compare Parts:
R6009JNJGTL ROHM Semiconductor Power Field-Effect Transistor, 9A I(D), 600V, 0.585ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-263AB, SC-83, TO-263S, D2PAK-3/2
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ROHM CO LTD
Package Description SC-83, TO-263S, D2PAK-3/2
Reach Compliance Code not_compliant
ECCN Code EAR99
Date Of Intro 2018-11-20
Samacsys Manufacturer ROHM Semiconductor
Avalanche Energy Rating (Eas) 177 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 9 A
Drain-source On Resistance-Max 0.585 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e2
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 27 A
Surface Mount YES
Terminal Finish Tin/Copper (Sn/Cu)
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for R6009JNJGTL

This table gives cross-reference parts and alternative options found for R6009JNJGTL. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of R6009JNJGTL, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
TK9P65W Toshiba America Electronic Components Check for Price Nch 500V<VDSS≤700V, Power MOSFET R6009JNJGTL vs TK9P65W

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