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Transistors / Power Field-Effect Transistors / R6006JNJGTL
Datasheets
R6006JNJGTL by: ROHM Semiconductor

Power Field-Effect Transistor, 6A I(D), 600V, 0.936ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-263AB, SC-83, TO-263S, D2PAK-3/2

Part Details for R6006JNJGTL by ROHM Semiconductor

Overview of R6006JNJGTL by ROHM Semiconductor

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Price & Stock for R6006JNJGTL

Part # Distributor Description Stock Price Buy
DISTI # 01AH7803
Newark Mosfet, N-Ch, 6A, 600V, To-263S, Transistor Polarity:N Channel, Continuous Drain Current Id:6A, Drain Source Voltage Vds:600V, On Resistance Rds(On):0.72Ohm, Rds(On) Test Voltage Vgs:15V, Threshold Voltage Vgs:6V, Power Dissipation Rohs Compliant: Yes |Rohm R6006JNJGTL Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape 85
  • 1 $1.5000
$1.5000 Buy Now
DISTI # R6006JNJGTLCT-ND
DigiKey MOSFET N-CH 600V 6A LPTS Min Qty: 1 Lead time: 23 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) 1098
In Stock
  • 1 $2.5500
  • 10 $2.1180
  • 100 $1.6859
  • 500 $1.4265
  • 1,000 $1.0700
$1.0700 / $2.5500 Buy Now
DISTI # R6006JNJGTL
Avnet Americas Transistor MOSFET N-CH 600V 6A 3-Pin TO-263S Emboss T/R - Tape and Reel (Alt: R6006JNJGTL) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Container: Reel 0
  • 1,000 $1.2669
  • 2,000 $1.2412
  • 4,000 $1.2155
  • 6,000 $1.1898
  • 8,000 $1.1642
  • 10,000 $1.1385
  • 100,000 $1.1128
$1.1128 / $1.2669 Buy Now
DISTI # 755-R6006JNJGTL
Mouser Electronics MOSFET R6006JNJ is a power MOSFET with low on-resistance and fast switching, suitable for the switching application. RoHS: Compliant 0
  • 1,000 $1.0700
$1.0700 Order Now
Future Electronics   RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Lead time: 23 Weeks Container: Reel 0
Reel
  • 1,000 $1.1300
$1.1300 Buy Now
DISTI # 36532651
Verical Trans MOSFET N-CH 600V 6A 3-Pin(2+Tab) LPTS T/R Min Qty: 50 Package Multiple: 1 Americas - 100
  • 50 $1.2329
$1.2329 Buy Now
DISTI # 36564835
Verical Trans MOSFET N-CH 600V 6A 3-Pin(2+Tab) LPTS T/R Min Qty: 50 Package Multiple: 1 Date Code: 1901 Americas - 100
  • 50 $1.4657
  • 100 $1.4159
$1.4159 / $1.4657 Buy Now
DISTI # 54691080
Verical Trans MOSFET N-CH 600V 6A 3-Pin(2+Tab) LPTS T/R Min Qty: 33 Package Multiple: 1 Americas - 100
  • 33 $0.9663
  • 50 $0.7950
  • 100 $0.4750
$0.4750 / $0.9663 Buy Now
Bristol Electronics   1000
RFQ
Quest Components   160
  • 1 $3.4600
  • 36 $1.9030
  • 80 $1.7300
$1.7300 / $3.4600 Buy Now
Quest Components   800
  • 1 $3.1140
  • 121 $1.9203
  • 522 $1.7127
$1.7127 / $3.1140 Buy Now
Ameya Holding Limited Transistors FETs, MOSFETs Single Min Qty: 1 100-Authorized Distributor
  • 1 $1.1079
  • 10 $1.0653
  • 50 $1.0342
  • 100 $1.0140
$1.0140 / $1.1079 Buy Now
DISTI # C1S625901816361
Chip1Stop MOSFET RoHS: Compliant pbFree: Yes Container: Cut Tape 100
  • 1 $0.9790
  • 10 $0.7730
  • 50 $0.6360
  • 100 $0.3800
$0.3800 / $0.9790 Buy Now
CoreStaff Co Ltd RoHS(Ship within 1day) - D/C 100
  • 1 $1.4680
  • 10 $1.2040
  • 50 $1.0110
  • 100 $0.9610
  • 500 $0.8960
  • 1,000 $0.8650
$0.8650 / $1.4680 Buy Now
CoreStaff Co Ltd RoHS(Ship within 1day) - D/C 2019 Date Code: 2019 100
  • 1 $1.4680
  • 10 $1.2040
  • 50 $1.0110
  • 100 $0.9610
  • 500 $0.8960
  • 1,000 $0.8650
$0.8650 / $1.4680 Buy Now

Part Details for R6006JNJGTL

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R6006JNJGTL Part Data Attributes

Parametric Data
R6006JNJGTL ROHM Semiconductor
Buy Now Datasheet
Compare Parts:
R6006JNJGTL ROHM Semiconductor Power Field-Effect Transistor, 6A I(D), 600V, 0.936ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-263AB, SC-83, TO-263S, D2PAK-3/2
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ROHM CO LTD
Package Description SC-83, TO-263S, D2PAK-3/2
Reach Compliance Code not_compliant
ECCN Code EAR99
Date Of Intro 2018-11-20
Samacsys Manufacturer ROHM Semiconductor
Avalanche Energy Rating (Eas) 117 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 6 A
Drain-source On Resistance-Max 0.936 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e2
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 18 A
Surface Mount YES
Terminal Finish Tin/Copper (Sn/Cu)
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for R6006JNJGTL

This table gives cross-reference parts and alternative options found for R6006JNJGTL. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of R6006JNJGTL, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
SIHD6N62E-GE3 Power Field-Effect Transistor, 6A I(D), 620V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, DPAK-3/2 Vishay Intertechnologies R6006JNJGTL vs SIHD6N62E-GE3

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