Datasheets
R6006ANX by: ROHM Semiconductor

Power Field-Effect Transistor, 6A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220FM, 3 PIN

Part Details for R6006ANX by ROHM Semiconductor

Overview of R6006ANX by ROHM Semiconductor

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Price & Stock for R6006ANX

Part # Distributor Description Stock Price Buy
DISTI # R6006ANX-ND
DigiKey MOSFET N-CH 600V 6A TO220FM Min Qty: 500 Lead time: 23 Weeks Container: Bulk Limited Supply - Call
  • 500 $1.1107
$1.1107 Buy Now
DISTI # 755-R6006ANX
Mouser Electronics MOSFETs 10V DRIVE NCH MOSFET RoHS: Compliant 0
Order Now
Future Electronics   RoHS: Compliant pbFree: Yes Min Qty: 500 Package Multiple: 500 Lead time: 23 Weeks Container: Bulk 0
Bulk
  • 500 $0.9240
$0.9240 Buy Now
DISTI # 53413414
Verical Trans MOSFET N-CH Si 600V 6A 3-Pin(3+Tab) TO-220FM Bulk RoHS: Compliant Min Qty: 50 Package Multiple: 1 Date Code: 1601 Americas - 500
  • 50 $1.4555
  • 100 $1.4061
  • 250 $1.3635
  • 500 $1.3264
$1.3264 / $1.4555 Buy Now
Quest Components   424
  • 1 $3.5480
  • 170 $1.6410
  • 367 $1.4636
$1.4636 / $3.5480 Buy Now
CoreStaff Co Ltd RoHS(Ship within 1day) - D/C 2016 Date Code: 2016 500
  • 1 $1.8620
  • 10 $1.5320
  • 50 $1.0560
  • 100 $1.0040
  • 500 $0.9160
  • 1,000 $0.8870
$0.8870 / $1.8620 Buy Now
CoreStaff Co Ltd RoHS(Ship within 1day) - D/C 2014 Date Code: 2014 30
  • 1 $1.8620
  • 10 $1.5320
  • 50 $1.0560
  • 100 $1.0040
  • 500 $0.9160
  • 1,000 $0.8870
$0.8870 / $1.8620 Buy Now

Part Details for R6006ANX

R6006ANX CAD Models

R6006ANX Part Data Attributes

R6006ANX ROHM Semiconductor
Buy Now Datasheet
Compare Parts:
R6006ANX ROHM Semiconductor Power Field-Effect Transistor, 6A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220FM, 3 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Not Recommended
Ihs Manufacturer ROHM CO LTD
Part Package Code TO-220AB
Package Description FLANGE MOUNT, R-PSFM-T3
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer ROHM Semiconductor
Avalanche Energy Rating (Eas) 2.4 mJ
Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 6 A
Drain-source On Resistance-Max 1.2 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e1
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 40 W
Pulsed Drain Current-Max (IDM) 24 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 10
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for R6006ANX

This table gives cross-reference parts and alternative options found for R6006ANX. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of R6006ANX, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
FMP06N60E Power Field-Effect Transistor, 6A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220F, 3 PIN Fuji Electric Co Ltd R6006ANX vs FMP06N60E
STP6LNC60 5.8A, 600V, 1.25ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN STMicroelectronics R6006ANX vs STP6LNC60
FMP05N60E Power Field-Effect Transistor, 5.5A I(D), 600V, 1.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN Fuji Electric Co Ltd R6006ANX vs FMP05N60E
STP6N62K3 N-channel 620 V, 0.95 Ohm typ., 5.5 A SuperMESH3(TM) Power MOSFET in TO-220 package STMicroelectronics R6006ANX vs STP6N62K3
ELM3C0660A Power Field-Effect Transistor, 6A I(D), 600V, 1.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN ELM Technology Corp R6006ANX vs ELM3C0660A
R6006ANDTL Power Field-Effect Transistor, 6A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SC-63, 3/2 PIN ROHM Semiconductor R6006ANX vs R6006ANDTL
FMP06N60ES Power Field-Effect Transistor, 6A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN Fuji Electric Co Ltd R6006ANX vs FMP06N60ES
STB6NK60Z 6A, 600V, 1.2ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, D2PAK-3 STMicroelectronics R6006ANX vs STB6NK60Z

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