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Power Field-Effect Transistor, 6A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220FM, 3 PIN
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
R6006ANX-ND
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DigiKey | MOSFET N-CH 600V 6A TO220FM Min Qty: 500 Lead time: 23 Weeks Container: Bulk | Limited Supply - Call |
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$1.1107 | Buy Now |
DISTI #
755-R6006ANX
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Mouser Electronics | MOSFETs 10V DRIVE NCH MOSFET RoHS: Compliant | 0 |
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Order Now | |
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Future Electronics | RoHS: Compliant pbFree: Yes Min Qty: 500 Package Multiple: 500 Lead time: 23 Weeks Container: Bulk | 0Bulk |
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$0.9240 | Buy Now |
DISTI #
53413414
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Verical | Trans MOSFET N-CH Si 600V 6A 3-Pin(3+Tab) TO-220FM Bulk RoHS: Compliant Min Qty: 50 Package Multiple: 1 Date Code: 1601 | Americas - 500 |
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$1.3264 / $1.4555 | Buy Now |
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Quest Components | 424 |
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$1.4636 / $3.5480 | Buy Now | |
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CoreStaff Co Ltd | RoHS(Ship within 1day) - D/C 2016 Date Code: 2016 | 500 |
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$0.8870 / $1.8620 | Buy Now |
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CoreStaff Co Ltd | RoHS(Ship within 1day) - D/C 2014 Date Code: 2014 | 30 |
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$0.8870 / $1.8620 | Buy Now |
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R6006ANX
ROHM Semiconductor
Buy Now
Datasheet
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Compare Parts:
R6006ANX
ROHM Semiconductor
Power Field-Effect Transistor, 6A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220FM, 3 PIN
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Not Recommended | |
Ihs Manufacturer | ROHM CO LTD | |
Part Package Code | TO-220AB | |
Package Description | FLANGE MOUNT, R-PSFM-T3 | |
Pin Count | 3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | ROHM Semiconductor | |
Avalanche Energy Rating (Eas) | 2.4 mJ | |
Case Connection | ISOLATED | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 600 V | |
Drain Current-Max (ID) | 6 A | |
Drain-source On Resistance-Max | 1.2 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e1 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 40 W | |
Pulsed Drain Current-Max (IDM) | 24 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 10 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for R6006ANX. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of R6006ANX, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
FMP06N60E | Power Field-Effect Transistor, 6A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220F, 3 PIN | Fuji Electric Co Ltd | R6006ANX vs FMP06N60E |
STP6LNC60 | 5.8A, 600V, 1.25ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN | STMicroelectronics | R6006ANX vs STP6LNC60 |
FMP05N60E | Power Field-Effect Transistor, 5.5A I(D), 600V, 1.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | Fuji Electric Co Ltd | R6006ANX vs FMP05N60E |
STP6N62K3 | N-channel 620 V, 0.95 Ohm typ., 5.5 A SuperMESH3(TM) Power MOSFET in TO-220 package | STMicroelectronics | R6006ANX vs STP6N62K3 |
ELM3C0660A | Power Field-Effect Transistor, 6A I(D), 600V, 1.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN | ELM Technology Corp | R6006ANX vs ELM3C0660A |
R6006ANDTL | Power Field-Effect Transistor, 6A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SC-63, 3/2 PIN | ROHM Semiconductor | R6006ANX vs R6006ANDTL |
FMP06N60ES | Power Field-Effect Transistor, 6A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | Fuji Electric Co Ltd | R6006ANX vs FMP06N60ES |
STB6NK60Z | 6A, 600V, 1.2ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, D2PAK-3 | STMicroelectronics | R6006ANX vs STB6NK60Z |