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Part Details for R6004END3TL1 by ROHM Semiconductor
Overview of R6004END3TL1 by ROHM Semiconductor
- Distributor Offerings: (11 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (3 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Space Technology
Aerospace and Defense
Energy and Power Systems
Price & Stock for R6004END3TL1
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
38AH5890
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Newark | Mosfet, N-Ch, 600V, 4A, 150Deg C, 59W, Transistor Polarity:N Channel, Continuous Drain Current Id:4A, Drain Source Voltage Vds:600V, On Resistance Rds(On):0.9Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:4V, Power Rohs Compliant: Yes |Rohm R6004END3TL1 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 0 |
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Buy Now | |
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DISTI #
846-R6004END3TL1CT-ND
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DigiKey | MOSFET N-CH 600V 4A TO252 Min Qty: 1 Lead time: 23 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
6892 In Stock |
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$0.5828 / $2.3000 | Buy Now |
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DISTI #
R6004END3TL1
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Avnet Americas | Transistor MOSFET N-CH 600V 4A 3-Pin TO-252 Emboss T/R - Tape and Reel (Alt: R6004END3TL1) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 23 Weeks, 0 Days Container: Reel | 0 |
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RFQ | |
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DISTI #
755-R6004END3TL1
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Mouser Electronics | MOSFETs Nch 600V 4A Power MOSFET. Power MOSFET R6004END3 is suitable for switching power supply. RoHS: Compliant | 4379 |
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$0.6130 / $1.5100 | Buy Now |
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Future Electronics | 600V,4A,900MOHM,DPAK RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Lead time: 18 Weeks Container: Reel | 0Reel |
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$0.6300 / $0.6550 | Buy Now |
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DISTI #
69067622
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Verical | Trans MOSFET N-CH 600V 4A 3-Pin(2+Tab) DPAK T/R Min Qty: 23 Package Multiple: 1 Date Code: 2307 | Americas - 2330 |
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$0.8288 / $1.3625 | Buy Now |
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DISTI #
R6004END3TL1
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TME | Transistor: N-MOSFET, unipolar, 600V, 4A, Idm: 8A, 59W, TO252 Min Qty: 1 | 0 |
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$0.4990 / $0.8540 | RFQ |
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Ameya Holding Limited | Min Qty: 1 | 10-Authorized Distributor |
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$0.4380 / $1.1500 | Buy Now |
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DISTI #
R6004END3TL1
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Avnet Silica | Transistor MOSFET N-CH 600V 4A 3-Pin TO-252 Emboss T/R (Alt: R6004END3TL1) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 22 Weeks, 0 Days | Silica - 0 |
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Buy Now | |
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DISTI #
C1S625901706824
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Chip1Stop | Discrete Semiconductors, MOSFETs, 190 to 800V Power MOSFETs, Nch 500 to 650V Super Junction MOSFETs, Low Noise Series RoHS: Compliant pbFree: Yes Container: Cut Tape | 2330 |
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$0.6630 / $1.3800 | Buy Now |
Part Details for R6004END3TL1
R6004END3TL1 CAD Models
R6004END3TL1 Part Data Attributes
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R6004END3TL1
ROHM Semiconductor
Buy Now
Datasheet
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Compare Parts:
R6004END3TL1
ROHM Semiconductor
Power Field-Effect Transistor,
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ROHM CO LTD | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 23 Weeks | |
| Date Of Intro | 2018-06-29 | |
| Samacsys Manufacturer | ROHM Semiconductor | |
| Avalanche Energy Rating (Eas) | 46 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 4 A | |
| Drain-source On Resistance-Max | 0.98 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252 | |
| JESD-30 Code | R-PSSO-G2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 8 A | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for R6004END3TL1
This table gives cross-reference parts and alternative options found for R6004END3TL1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of R6004END3TL1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| TSM60NB900CPROG | Taiwan Semiconductor | Check for Price | Power Field-Effect Transistor, 4A I(D), 600V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3/2 | R6004END3TL1 vs TSM60NB900CPROG |
| CDM4-600LR | Central Semiconductor Corp | Check for Price | Power Field-Effect Transistor, 4A I(D), 600V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3/2 | R6004END3TL1 vs CDM4-600LR |
| TSM60NB900CHC5G | Taiwan Semiconductor | Check for Price | Power Field-Effect Transistor, 4A I(D), 600V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, IPAK-3 | R6004END3TL1 vs TSM60NB900CHC5G |