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Transistors / Power Field-Effect Transistors / R6004END3TL1
Datasheets
R6004END3TL1 by: ROHM Semiconductor

Power Field-Effect Transistor,

Part Details for R6004END3TL1 by ROHM Semiconductor

Results Overview of R6004END3TL1 by ROHM Semiconductor

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Applications Space Technology Aerospace and Defense Energy and Power Systems

R6004END3TL1 Information

R6004END3TL1 by ROHM Semiconductor is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for R6004END3TL1

Part # Distributor Description Stock Price Buy
DISTI # 38AH5890
Newark Mosfet, N-Ch, 600V, 4A, 150Deg C, 59W, Transistor Polarity:N Channel, Continuous Drain Current Id:... 4A, Drain Source Voltage Vds:600V, On Resistance Rds(On):0.9Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:4V, Power Rohs Compliant: Yes |Rohm R6004END3TL1 more RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape 0
Buy Now
DISTI # 846-R6004END3TL1CT-ND
DigiKey MOSFET N-CH 600V 4A TO252 Min Qty: 1 Lead time: 23 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) 6913
In Stock
  • 1 $1.5400
  • 10 $1.2140
  • 100 $0.9170
  • 500 $0.7774
  • 1,000 $0.7161
  • 2,500 $0.5828
$0.5828 / $1.5400 Buy Now
DISTI # 755-R6004END3TL1
Mouser Electronics MOSFETs Nch 600V 4A Power MOSFET. Power MOSFET R6004END3 is suitable for switching power supply. RoHS: Compliant 4369
  • 1 $1.5100
  • 10 $1.1900
  • 100 $0.8990
  • 500 $0.7340
  • 1,000 $0.6810
  • 2,500 $0.6120
$0.6120 / $1.5100 Buy Now
Future Electronics 600V,4A,900MOHM,DPAK RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Lead time: 18 Weeks Container: Reel 0
Reel
  • 2,500 $0.6650
  • 5,000 $0.6500
$0.6500 / $0.6650 Buy Now
DISTI # R6004END3TL1
TME Transistor: N-MOSFET, unipolar, 600V, 4A, Idm: 8A, 59W, TO252 Min Qty: 1 0
  • 1 $0.8130
  • 10 $0.6910
  • 100 $0.6050
  • 250 $0.5730
  • 500 $0.5500
  • 1,000 $0.5270
  • 2,500 $0.4970
  • 5,000 $0.4750
$0.4750 / $0.8130 RFQ
Ameya Holding Limited   Min Qty: 1 10-Authorized Distributor
  • 1 $1.1500
  • 10 $0.9400
  • 100 $0.7520
  • 500 $0.6410
  • 1,000 $0.5540
  • 2,500 $0.4380
$0.4380 / $1.1500 Buy Now RFQ
DISTI # R6004END3TL1
Avnet Silica Transistor MOSFET NCH 600V 4A 3Pin TO252 Emboss TR (Alt: R6004END3TL1) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 22 Weeks, 0 Days Silica - 0
Buy Now
DISTI # R6004END3TL1
Chip One Stop Semiconductors RoHS: Compliant pbFree: Yes Min Qty: 5 Lead time: 0 Weeks, 1 Days Container: Cut Tape 2230
  • 5 $1.4400
  • 10 $1.1400
  • 50 $0.9700
  • 100 $0.8630
  • 200 $0.8180
  • 500 $0.7040
$0.7040 / $1.4400 Buy Now

Part Details for R6004END3TL1

R6004END3TL1 CAD Models

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R6004END3TL1 Part Data Attributes

Parametric Data
R6004END3TL1 ROHM Semiconductor
Buy Now Datasheet
Compare Parts:
R6004END3TL1 ROHM Semiconductor Power Field-Effect Transistor,
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Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ROHM CO LTD
Package Description DPAK-3/2
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 23 Weeks
Date Of Intro 2018-06-29
Samacsys Manufacturer ROHM Semiconductor
Avalanche Energy Rating (Eas) 46 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 4 A
Drain-source On Resistance-Max 0.98 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252
JESD-30 Code R-PSSO-G2
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 8 A
Surface Mount YES
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for R6004END3TL1

This table gives cross-reference parts and alternative options found for R6004END3TL1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of R6004END3TL1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
CDM4-600LRTR13 Central Semiconductor Corp Check for Price Power Field-Effect Transistor, 4A I(D), 600V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3/2 R6004END3TL1 vs CDM4-600LRTR13
TSM60NB900CHC5G Taiwan Semiconductor Check for Price Power Field-Effect Transistor, 4A I(D), 600V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, IPAK-3 R6004END3TL1 vs TSM60NB900CHC5G
R6004ENDTL ROHM Semiconductor $0.9601 Power Field-Effect Transistor, 4A I(D), 600V, 0.98ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CPT3, SC-63, 3/2 PIN R6004END3TL1 vs R6004ENDTL
AOB4S60 Alpha & Omega Semiconductor Check for Price Power Field-Effect Transistor, 4A I(D), 600V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3/2 R6004END3TL1 vs AOB4S60
R6004ENJTL ROHM Semiconductor $1.0062 Power Field-Effect Transistor, 4A I(D), 600V, 0.98ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, LPTS, SC-83, 3/2 PIN R6004END3TL1 vs R6004ENJTL

R6004END3TL1 Frequently Asked Questions (FAQ)

  • The recommended operating temperature range for the R6004END3TL1 is -40°C to 125°C, as specified in the datasheet. However, it's essential to note that the device's performance and reliability may degrade if operated outside this range for extended periods.

  • To ensure proper biasing, follow the recommended voltage and current ratings specified in the datasheet. Typically, this involves connecting the input voltage (VIN) to a stable DC power source, and ensuring the output voltage (VOUT) is within the specified range. Additionally, consider the device's quiescent current (IQ) and adjust the biasing accordingly to minimize power consumption.

  • The maximum output current capability of the R6004END3TL1 is typically limited by the device's thermal design and package. According to the datasheet, the maximum output current is 3A. However, it's crucial to consider the device's power dissipation, thermal resistance, and ambient temperature to avoid overheating and ensure reliable operation.

  • To protect the R6004END3TL1 from overvoltage and undervoltage conditions, consider implementing overvoltage protection (OVP) and undervoltage lockout (UVLO) circuits. These can be achieved using external components, such as zener diodes, resistors, and capacitors, or by using dedicated ICs designed for voltage monitoring and protection.

  • For optimal thermal performance and reliability, follow the recommended PCB layout and thermal management strategy outlined in the datasheet or application notes. This typically involves using a multi-layer PCB with thermal vias, placing the device on a solid copper plane, and ensuring adequate heat sinking and airflow around the device.