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Power Field-Effect Transistor, 1.7A I(D), 600V, 3.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8
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R6002ENHTB1 by ROHM Semiconductor is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
846-R6002ENHTB1CT-ND
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DigiKey | 600V 1.7A SOP8, LOW-NOISE POWER Min Qty: 1 Lead time: 23 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
1870 In Stock |
|
$0.4300 / $1.4100 | Buy Now |
DISTI #
755-R6002ENHTB1
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Mouser Electronics | MOSFETs SOP8 600V 1.7A N-CH MOSFET RoHS: Compliant | 4308 |
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$0.4380 / $1.3800 | Buy Now |
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Future Electronics | RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Lead time: 18 Weeks Container: Reel |
0 Reel |
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$0.4530 / $0.4660 | Buy Now |
DISTI #
36534901
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Verical | Trans MOSFET N-CH 600V 1.7A 8-Pin SOP T/R RoHS: Compliant Min Qty: 78 Package Multiple: 1 Date Code: 1901 | Americas - 78 |
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$1.0974 | Buy Now |
DISTI #
R6002ENHTB1
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TTI | MOSFETs SOP8 600V 1.7A N-CH MOSFET RoHS: Compliant pbFree: Pb-Free Min Qty: 2500 Package Multiple: 2500 Container: Reel | Americas - 0 |
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$0.4250 / $0.4770 | Buy Now |
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Ameya Holding Limited | Transistors FETs, MOSFETs Single Min Qty: 1 | 34-Authorized Distributor |
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$0.3700 / $0.4500 | Buy Now |
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R6002ENHTB1
ROHM Semiconductor
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Datasheet
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Compare Parts:
R6002ENHTB1
ROHM Semiconductor
Power Field-Effect Transistor, 1.7A I(D), 600V, 3.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8
Select a part to compare: |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | ROHM CO LTD | |
Package Description | SOP-8 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Date Of Intro | 2019-11-15 | |
Samacsys Manufacturer | ROHM Semiconductor | |
Avalanche Energy Rating (Eas) | 6 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 600 V | |
Drain Current-Max (ID) | 1.7 A | |
Drain-source On Resistance-Max | 3.4 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-G8 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 4 A | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |