Part Details for R5207ANDTL by ROHM Semiconductor
Overview of R5207ANDTL by ROHM Semiconductor
- Distributor Offerings: (7 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for R5207ANDTL
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
R5207ANDTL-ND
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DigiKey | MOSFET N-CH 525V 7A CPT3 Lead time: 23 Weeks Container: Tape & Reel (TR) | Temporarily Out of Stock |
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Buy Now | |
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DISTI #
755-R5207ANDTL
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Mouser Electronics | MOSFET LO CURR HI EFF MOSFT HI BREAKDWN RESIST | 0 |
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Order Now | |
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Future Electronics | RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Lead time: 23 Weeks Container: Reel | 0Reel |
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$0.7270 | Buy Now |
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DISTI #
36527426
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Verical | Trans MOSFET N-CH Si 525V 7A 3-Pin(2+Tab) CPT T/R Min Qty: 57 Package Multiple: 1 Date Code: 1701 | Americas - 2500 |
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$1.2496 / $1.5060 | Buy Now |
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Quest Components | 2000 |
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$1.1295 / $3.0120 | Buy Now | |
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DISTI #
R5207ANDTL
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Avnet Silica | Trans MOSFET N-CH 525V 7A 3-Pin(2+Tab) CPT T/R (Alt: R5207ANDTL) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 13 Weeks, 0 Days | Silica - 0 |
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Buy Now | |
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CoreStaff Co Ltd | RoHS(Ship within 1day) - D/C 2017 Date Code: 2017 | 2500 |
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$0.7530 / $1.9130 | Buy Now |
Part Details for R5207ANDTL
R5207ANDTL CAD Models
R5207ANDTL Part Data Attributes
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R5207ANDTL
ROHM Semiconductor
Buy Now
Datasheet
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R5207ANDTL
ROHM Semiconductor
Power Field-Effect Transistor, 7A I(D), 525V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SC-63, 3/2 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | ROHM CO LTD | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | ROHM Semiconductor | |
| Avalanche Energy Rating (Eas) | 3.2 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 525 V | |
| Drain Current-Max (ID) | 7 A | |
| Drain-source On Resistance-Max | 1 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e2 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 28 A | |
| Surface Mount | YES | |
| Terminal Finish | Tin/Copper (Sn/Cu) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |