Part Details for R5016ANX by ROHM Semiconductor
Overview of R5016ANX by ROHM Semiconductor
- Distributor Offerings: (7 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for R5016ANX
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
R5016ANX-ND
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DigiKey | MOSFET N-CH 500V 16A TO220FM Min Qty: 500 Lead time: 23 Weeks Container: Bulk | Limited Supply - Call |
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$3.4938 | Buy Now |
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DISTI #
755-R5016ANX
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Mouser Electronics | MOSFET TRANS MOSFET NCH 500V 16A 3PIN RoHS: Compliant | 0 |
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Order Now | |
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Future Electronics | RoHS: Compliant pbFree: Yes Min Qty: 500 Package Multiple: 500 Lead time: 23 Weeks Container: Reel | 0Reel |
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$2.1400 | Buy Now |
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DISTI #
36525672
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Verical | Trans MOSFET N-CH Si 500V 16A 3-Pin(3+Tab) TO-220FM Bulk RoHS: Compliant Min Qty: 23 Package Multiple: 1 Date Code: 1401 | Americas - 90 |
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$3.2198 / $3.4976 | Buy Now |
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Quest Components | 72 |
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$3.6464 / $5.9130 | Buy Now | |
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DISTI #
C1S625900681184
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Chip1Stop | Trans MOSFET N-CH Si 500V 16A 3-Pin(3+Tab) TO-220FM Bulk RoHS: Compliant pbFree: Yes Container: Bulk | 70 |
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$1.4600 / $1.5000 | Buy Now |
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CoreStaff Co Ltd | RoHS(Ship within 1day) - D/C 2014 Date Code: 2014 | 90 |
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$1.9710 / $2.9950 | Buy Now |
Part Details for R5016ANX
R5016ANX CAD Models
R5016ANX Part Data Attributes:
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R5016ANX
ROHM Semiconductor
Buy Now
Datasheet
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Compare Parts:
R5016ANX
ROHM Semiconductor
Power Field-Effect Transistor, 16A I(D), 500V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220FM, 3 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | ROHM CO LTD | |
| Part Package Code | TO-220AB | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 18 mJ | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 500 V | |
| Drain Current-Max (ID) | 16 A | |
| Drain-source On Resistance-Max | 0.27 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 50 W | |
| Pulsed Drain Current-Max (IDM) | 64 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |