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Power Field-Effect Transistor, 3.5A I(D), 12V, 0.043ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TSMT8, 8 PIN
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Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
QS8J11TCRCT-ND
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DigiKey | MOSFET 2P-CH 12V 3.5A TSMT8 Min Qty: 1 Lead time: 16 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) | Temporarily Out of Stock |
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$0.9300 | Buy Now |
DISTI #
755-QS8J11TCR
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Mouser Electronics | MOSFETs Dual P-Channel MOSFET Transistor RoHS: Compliant | 0 |
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Order Now | |
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Future Electronics | RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Lead time: 16 Weeks Container: Reel | 0Reel |
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$0.1788 | Buy Now |
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Ameya Holding Limited | Transistors FETs, MOSFETs Arrays Min Qty: 1 | 100-Authorized Distributor |
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$0.2504 / $0.4256 | Buy Now |
DISTI #
C1S625901573350
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Chip1Stop | MOSFET RoHS: Compliant pbFree: Yes | 500 |
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$0.4440 / $0.4880 | Buy Now |
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QS8J11TCR
ROHM Semiconductor
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Datasheet
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QS8J11TCR
ROHM Semiconductor
Power Field-Effect Transistor, 3.5A I(D), 12V, 0.043ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TSMT8, 8 PIN
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Not Recommended | |
Ihs Manufacturer | ROHM CO LTD | |
Package Description | TSMT8, 8 PIN | |
Pin Count | 8 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | ROHM Semiconductor | |
Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 12 V | |
Drain Current-Max (ID) | 3.5 A | |
Drain-source On Resistance-Max | 0.043 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-F8 | |
JESD-609 Code | e2 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 2 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation-Max (Abs) | 1.5 W | |
Pulsed Drain Current-Max (IDM) | 12 A | |
Surface Mount | YES | |
Terminal Finish | Tin/Copper (Sn/Cu) | |
Terminal Form | FLAT | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 10 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |