Part Details for QID3320002 by Powerex Power Semiconductors
Overview of QID3320002 by Powerex Power Semiconductors
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Space Technology
Industrial Automation
Aerospace and Defense
Transportation and Logistics
Renewable Energy
Automotive
Robotics and Drones
Price & Stock for QID3320002
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
QID3320002
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Richardson RFPD | POWER IGBT TRANSISTOR RoHS: Compliant Min Qty: 1 | 0 |
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RFQ |
Part Details for QID3320002
QID3320002 CAD Models
QID3320002 Part Data Attributes
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QID3320002
Powerex Power Semiconductors
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Datasheet
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QID3320002
Powerex Power Semiconductors
Insulated Gate Bipolar Transistor, 370A I(C), 3300V V(BR)CES,
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | POWEREX INC | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Collector Current-Max (IC) | 370 A | |
| Collector-Emitter Voltage-Max | 3300 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| Number of Elements | 1 | |
| Operating Temperature-Max | 150 °C | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Power Dissipation-Max (Abs) | 1780 W | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| VCEsat-Max | 3.3 V |