| Part # | Manufacturer | Description | Stock | Price | Buy | ||
|---|---|---|---|---|---|---|---|
|
DISTI #
10AC8609
|
Newark | Mosfet, N And P-Ch, 30V, 7A, Tsmt, Transistor Polarity:N And P Channel, Continuous Drain Current Id:7A, Drain Source Voltage Vds:30V, On Resistance Rds(On):0.022Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:2.5V, Power Rohs Compliant: Yes |Rohm QH8MA3TCR Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 5162 |
|
$0.3320 / $0.7700 | Buy Now | |
|
DISTI #
QH8MA3TCRCT-ND
|
DigiKey | MOSFET N/P-CH 30V 7A/5.5A TSMT8 Min Qty: 1 Lead time: 16 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) | Temporarily Out of Stock |
|
$0.2475 / $0.7500 | Buy Now | |
|
DISTI #
QH8MA3TCR
|
Avnet Americas | Trans MOSFET N-CH/P-CH 30V±7A@N Channel/±5.5A@P Channel 8-Pin TSMT Emboss T/R - Tape and Reel (Alt: QH8MA3TCR) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 16 Weeks, 0 Days Container: Reel | 0 |
|
$0.2534 / $0.2891 | Buy Now | |
|
DISTI #
755-QH8MA3TCR
|
Mouser Electronics | MOSFET 30V N+P Ch MOSFET RoHS: Compliant | 5149 |
|
$0.2470 / $0.7700 | Buy Now | |
| Future Electronics | MOSFET 30V N+P Ch MOSFET RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Lead time: 16 Weeks Container: Reel | 0Reel |
|
$0.2450 / $0.2650 | Buy Now | ||
| Quest Components | 4767 |
|
$0.3750 / $1.2500 | Buy Now | |||
|
DISTI #
QH8MA3TCR
|
TME | Transistor: N/P-MOSFET, unipolar, 30/-30V, 7/-5.5A, Idm: 18A, 2.5W Min Qty: 3 | 0 |
|
$0.2000 / $0.2860 | RFQ | |
|
DISTI #
QH8MA3TCR
|
Avnet Asia | Trans MOSFET N-CH/P-CH 30V±7A@N Channel/±5.5A@P Channel 8-Pin TSMT Emboss T/R (Alt: QH8MA3TCR) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 24 Weeks, 0 Days | 0 |
|
RFQ |
|
|
|
|---|---|
|
Rohs Code
|
Yes
|
|
Part Life Cycle Code
|
Active
|
|
Ihs Manufacturer
|
ROHM CO LTD
|
|
Reach Compliance Code
|
compliant
|
|
ECCN Code
|
EAR99
|
|
Factory Lead Time
|
16 Weeks
|
|
Samacsys Manufacturer
|
ROHM Semiconductor
|
|
Avalanche Energy Rating (Eas)
|
1.8 mJ
|
|
Configuration
|
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
|
|
DS Breakdown Voltage-Min
|
30 V
|
|
Drain-source On Resistance-Max
|
0.029 Ω
|
|
FET Technology
|
METAL-OXIDE SEMICONDUCTOR
|
|
JESD-30 Code
|
R-PDSO-F8
|
|
JESD-609 Code
|
e3
|
|
Moisture Sensitivity Level
|
1
|
|
Number of Elements
|
2
|
|
Number of Terminals
|
8
|
|
Operating Mode
|
ENHANCEMENT MODE
|
|
Package Body Material
|
PLASTIC/EPOXY
|
|
Package Shape
|
RECTANGULAR
|
|
Package Style
|
SMALL OUTLINE
|
|
Peak Reflow Temperature (Cel)
|
260
|
|
Polarity/Channel Type
|
N-CHANNEL AND P-CHANNEL
|
|
Pulsed Drain Current-Max (IDM)
|
18 A
|
|
Surface Mount
|
YES
|
|
Terminal Finish
|
Tin (Sn)
|
|
Terminal Form
|
FLAT
|
|
Terminal Position
|
DUAL
|
|
Time@Peak Reflow Temperature-Max (s)
|
10
|
|
Transistor Application
|
SWITCHING
|
|
Transistor Element Material
|
SILICON
|
