Part Details for PXFC192207SHV1R250XTMA1 by Infineon Technologies AG
Overview of PXFC192207SHV1R250XTMA1 by Infineon Technologies AG
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Industrial Automation
Renewable Energy
Robotics and Drones
Price & Stock for PXFC192207SHV1R250XTMA1
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DISTI #
PXFC192207SHV1R250XTMA1-ND
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DigiKey | RF MOSFET LDMOS H-37288G-4 Lead time: 26 Weeks Container: Tape & Reel (TR) | Temporarily Out of Stock |
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Part Details for PXFC192207SHV1R250XTMA1
PXFC192207SHV1R250XTMA1 CAD Models
PXFC192207SHV1R250XTMA1 Part Data Attributes
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PXFC192207SHV1R250XTMA1
Infineon Technologies AG
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Datasheet
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PXFC192207SHV1R250XTMA1
Infineon Technologies AG
RF Power Field-Effect Transistor,
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| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Samacsys Modified On | 2020-11-30 19:47:12 | |
| Category CO2 Kg | 8.9 | |
| EU RoHS Version | RoHS 2 (2015/863/EU) | |
| Candidate List Date | 2024-01-23 | |
| EFUP | e | |
| Conflict Mineral Status | DRC Conflict Free | |
| Conflict Mineral Status Source | CMRT V5.12 | |
| Case Connection | SOURCE | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 65 V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Highest Frequency Band | L BAND | |
| JESD-30 Code | R-CQFP-X4 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 225 °C | |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLATPACK | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Gain-Min (Gp) | 19 dB | |
| Surface Mount | YES | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | QUAD | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | AMPLIFIER | |
| Transistor Element Material | SILICON |