Part Details for PXAC261002FCV1R0XTMA1 by Infineon Technologies AG
Overview of PXAC261002FCV1R0XTMA1 by Infineon Technologies AG
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Part Details for PXAC261002FCV1R0XTMA1
PXAC261002FCV1R0XTMA1 CAD Models
PXAC261002FCV1R0XTMA1 Part Data Attributes
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PXAC261002FCV1R0XTMA1
Infineon Technologies AG
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Datasheet
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PXAC261002FCV1R0XTMA1
Infineon Technologies AG
RF Power Field-Effect Transistor,
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Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Date Of Intro | 2016-06-15 | |
Case Connection | SOURCE | |
Configuration | COMMON SOURCE, 2 ELEMENTS | |
DS Breakdown Voltage-Min | 65 V | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Highest Frequency Band | S BAND | |
JESD-30 Code | R-CDFP-F4 | |
Number of Elements | 2 | |
Number of Terminals | 4 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 225 °C | |
Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
Package Shape | RECTANGULAR | |
Package Style | FLATPACK | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Gain-Min (Gp) | 14.1 dB | |
Surface Mount | YES | |
Terminal Form | FLAT | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | AMPLIFIER | |
Transistor Element Material | SILICON |