Part Details for PXAC210552FCV1R0XTMA1 by Infineon Technologies AG
Overview of PXAC210552FCV1R0XTMA1 by Infineon Technologies AG
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Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Part Details for PXAC210552FCV1R0XTMA1
PXAC210552FCV1R0XTMA1 CAD Models
PXAC210552FCV1R0XTMA1 Part Data Attributes
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PXAC210552FCV1R0XTMA1
Infineon Technologies AG
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PXAC210552FCV1R0XTMA1
Infineon Technologies AG
RF Power Field-Effect Transistor
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Case Connection | SOURCE | |
| Configuration | COMMON SOURCE, 2 ELEMENTS | |
| DS Breakdown Voltage-Min | 65 V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Highest Frequency Band | S BAND | |
| JESD-30 Code | R-CDFP-F4 | |
| Number of Elements | 2 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 225 °C | |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLATPACK | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Gain-Min (Gp) | 16 dB | |
| Surface Mount | YES | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | AMPLIFIER | |
| Transistor Element Material | SILICON |