Part Details for PTVA120501EAV1R0XTMA1 by Infineon Technologies AG
Overview of PTVA120501EAV1R0XTMA1 by Infineon Technologies AG
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Applications
Telecommunications
Part Details for PTVA120501EAV1R0XTMA1
PTVA120501EAV1R0XTMA1 CAD Models
PTVA120501EAV1R0XTMA1 Part Data Attributes
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PTVA120501EAV1R0XTMA1
Infineon Technologies AG
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Datasheet
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PTVA120501EAV1R0XTMA1
Infineon Technologies AG
RF Power Field-Effect Transistor,
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Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Date Of Intro | 2016-05-26 | |
Samacsys Manufacturer | Infineon | |
Case Connection | SOURCE | |
Configuration | SINGLE | |
DS Breakdown Voltage-Min | 105 V | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Highest Frequency Band | L BAND | |
JESD-30 Code | S-CDFM-F2 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 225 °C | |
Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
Package Shape | SQUARE | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Gain-Min (Gp) | 16.5 dB | |
Surface Mount | YES | |
Terminal Form | FLAT | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | AMPLIFIER | |
Transistor Element Material | SILICON |