Part Details for PTVA102001EAV1R0XTMA1 by Infineon Technologies AG
Overview of PTVA102001EAV1R0XTMA1 by Infineon Technologies AG
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Applications
Education and Research
Consumer Electronics
Industrial Automation
Audio and Video Systems
Virtual Reality (VR), Augmented Reality (AR), and Vision Systems
Electronic Manufacturing
Part Details for PTVA102001EAV1R0XTMA1
PTVA102001EAV1R0XTMA1 CAD Models
PTVA102001EAV1R0XTMA1 Part Data Attributes:
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PTVA102001EAV1R0XTMA1
Infineon Technologies AG
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PTVA102001EAV1R0XTMA1
Infineon Technologies AG
RF Power Field-Effect Transistor,
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Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Case Connection | SOURCE | |
Configuration | SINGLE | |
DS Breakdown Voltage-Min | 105 V | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Highest Frequency Band | L BAND | |
JESD-30 Code | S-CDFM-F2 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 225 °C | |
Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
Package Shape | SQUARE | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Gain-Min (Gp) | 17 dB | |
Surface Mount | YES | |
Terminal Form | FLAT | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | AMPLIFIER | |
Transistor Element Material | SILICON |