Datasheets
PTFA220121MV4R1KXUMA1 by: Infineon Technologies AG

RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, GREEN, PLASTIC, SON-10

Part Details for PTFA220121MV4R1KXUMA1 by Infineon Technologies AG

Overview of PTFA220121MV4R1KXUMA1 by Infineon Technologies AG

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Applications Telecommunications

Part Details for PTFA220121MV4R1KXUMA1

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PTFA220121MV4R1KXUMA1 Part Data Attributes

PTFA220121MV4R1KXUMA1 Infineon Technologies AG
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PTFA220121MV4R1KXUMA1 Infineon Technologies AG RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, GREEN, PLASTIC, SON-10
Pbfree Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description SMALL OUTLINE, R-PDSO-N10
Reach Compliance Code compliant
ECCN Code EAR99
Case Connection SOURCE
Configuration SINGLE
DS Breakdown Voltage-Min 65 V
FET Technology METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band S BAND
JESD-30 Code R-PDSO-N10
Number of Elements 1
Number of Terminals 10
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 200 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Surface Mount YES
Terminal Form NO LEAD
Terminal Position DUAL
Transistor Application AMPLIFIER
Transistor Element Material SILICON

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