Datasheets
PTFA212401EV4 by: Infineon Technologies AG

RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, GREEN, H-36260-2, 2 PIN

Part Details for PTFA212401EV4 by Infineon Technologies AG

Overview of PTFA212401EV4 by Infineon Technologies AG

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Applications Telecommunications

Part Details for PTFA212401EV4

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PTFA212401EV4 Part Data Attributes:

PTFA212401EV4 Infineon Technologies AG
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PTFA212401EV4 Infineon Technologies AG RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, GREEN, H-36260-2, 2 PIN
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description GREEN, H-36260-2, 2 PIN
Pin Count 2
Reach Compliance Code unknown
ECCN Code EAR99
Additional Feature HGH RELIABILITY
Case Connection SOURCE
Configuration SINGLE
DS Breakdown Voltage-Min 65 V
FET Technology METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band S BAND
JESD-30 Code R-XDFM-F2
JESD-609 Code e4
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 200 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 761 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Gold (Au)
Terminal Form FLAT
Terminal Position DUAL
Transistor Application AMPLIFIER
Transistor Element Material SILICON

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