Datasheets
PTFA210701E by: Infineon Technologies AG

RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, GREEN, PACKAGE H-30265-2, 3 PIN

Part Details for PTFA210701E by Infineon Technologies AG

Results Overview of PTFA210701E by Infineon Technologies AG

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Applications Industrial Automation Renewable Energy Robotics and Drones

PTFA210701E Information

PTFA210701E by Infineon Technologies AG is an RF Power Field-Effect Transistor.
RF Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Part Details for PTFA210701E

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PTFA210701E Part Data Attributes

PTFA210701E Infineon Technologies AG
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PTFA210701E Infineon Technologies AG RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, GREEN, PACKAGE H-30265-2, 3 PIN
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Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description GREEN, PACKAGE H-30265-2, 3 PIN
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Configuration SINGLE
DS Breakdown Voltage-Min 65 V
FET Technology METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band S BAND
JESD-30 Code R-CDFM-F3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 200 °C
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount YES
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON

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