Datasheets
PTFA181001FV4 by: Infineon Technologies AG

RF Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

Part Details for PTFA181001FV4 by Infineon Technologies AG

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PTFA181001FV4 Information

PTFA181001FV4 by Infineon Technologies AG is an RF Power Field-Effect Transistor.
RF Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Part Details for PTFA181001FV4

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PTFA181001FV4 Part Data Attributes

PTFA181001FV4 Infineon Technologies AG
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PTFA181001FV4 Infineon Technologies AG RF Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
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Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Reach Compliance Code compliant
ECCN Code EAR99
Configuration SINGLE
FET Technology METAL-OXIDE SEMICONDUCTOR
Number of Elements 1
Operating Temperature-Max 200 °C
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 407 W