Part Details for PTFA181001FV4 by Infineon Technologies AG
Results Overview of PTFA181001FV4 by Infineon Technologies AG
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
PTFA181001FV4 Information
PTFA181001FV4 by Infineon Technologies AG is an RF Power Field-Effect Transistor.
RF Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for PTFA181001FV4
PTFA181001FV4 CAD Models
PTFA181001FV4 Part Data Attributes
|
PTFA181001FV4
Infineon Technologies AG
Buy Now
Datasheet
|
Compare Parts:
PTFA181001FV4
Infineon Technologies AG
RF Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
Select a part to compare: |
Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Configuration | SINGLE | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Number of Elements | 1 | |
Operating Temperature-Max | 200 °C | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 407 W |