Datasheets
PTFA080551FV4R250 by:
Infineon Technologies AG
Cree, Inc.
Infineon Technologies AG
Wolfspeed
Not Found

RF Power Field-Effect Transistor,

Part Details for PTFA080551FV4R250 by Infineon Technologies AG

Results Overview of PTFA080551FV4R250 by Infineon Technologies AG

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PTFA080551FV4R250 Information

PTFA080551FV4R250 by Infineon Technologies AG is an RF Power Field-Effect Transistor.
RF Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Part Details for PTFA080551FV4R250

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PTFA080551FV4R250 Part Data Attributes

PTFA080551FV4R250 Infineon Technologies AG
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PTFA080551FV4R250 Infineon Technologies AG RF Power Field-Effect Transistor,
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Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description FLATPACK, S-CDFP-F2
Reach Compliance Code compliant
ECCN Code EAR99
Date Of Intro 2016-06-21
Case Connection SOURCE
Configuration SINGLE
DS Breakdown Voltage-Min 65 V
FET Technology METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band ULTRA HIGH FREQUENCY BAND
JESD-30 Code S-CDFP-F2
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 200 °C
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape SQUARE
Package Style FLATPACK
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Gain-Min (Gp) 18 dB
Surface Mount YES
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application AMPLIFIER
Transistor Element Material SILICON