Datasheets
PTFA080551E-V4-R250 by:

RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET,

Part Details for PTFA080551E-V4-R250 by Wolfspeed

Overview of PTFA080551E-V4-R250 by Wolfspeed

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Available Datasheets

Part # Manufacturer Description Datasheet
SIT5356AC-FQ033JR-25.000000 SiTime 1 to 60 MHz, Stratum 3 Super-TCXO
SiT5155AE-FK033JR-25.000000 SiTime ±0.5 ppm Super-TCXO for GNSS/GPS
SIT5356AI-FQ033JR-25.000000 SiTime 1 to 60 MHz, Stratum 3 Super-TCXO

Part Details for PTFA080551E-V4-R250

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PTFA080551E-V4-R250 Part Data Attributes

PTFA080551E-V4-R250 Wolfspeed
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PTFA080551E-V4-R250 Wolfspeed RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET,
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer WOLFSPEED INC
Reach Compliance Code compliant
ECCN Code EAR99
Case Connection SOURCE
Configuration SINGLE
DS Breakdown Voltage-Min 65 V
FET Technology METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band ULTRA HIGH FREQUENCY BAND
JESD-30 Code S-CDFM-F2
JESD-609 Code e4
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 200 °C
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape SQUARE
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Gain-Min (Gp) 18 dB
Surface Mount YES
Terminal Finish Gold (Au)
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application AMPLIFIER
Transistor Element Material SILICON

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