PTFA080551E-V4-R250
Description: RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET,

Overview of PTFA080551E-V4-R250 by Wolfspeed

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  • Distributor Offerings: ( 0 listings )
  • Number of FFF Equivalents: ( 0 replacements )
  • CAD Models: ( Request Part )
  • Number of Functional Equivalents: ( 0 options )
  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )

Available Datasheets

Part # Manufacturer Description Datasheet
SIT5356AC-FQ033JR-25.000000 SiTime 1 to 60 MHz, Stratum 3 Super-TCXO
SiT5155AE-FK033JR-25.000000 SiTime ±0.5 ppm Super-TCXO for GNSS/GPS
SIT5356AI-FQ033JR-25.000000 SiTime 1 to 60 MHz, Stratum 3 Super-TCXO

CAD Models for PTFA080551E-V4-R250 by Wolfspeed
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Part Data Attributes for PTFA080551E-V4-R250 by Wolfspeed

PTFA080551E-V4-R250
Wolfspeed
-
-
Rohs Code
Yes
Part Life Cycle Code
Transferred
Ihs Manufacturer
WOLFSPEED INC
Reach Compliance Code
compliant
ECCN Code
EAR99
Case Connection
SOURCE
Configuration
SINGLE
DS Breakdown Voltage-Min
65 V
FET Technology
METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band
ULTRA HIGH FREQUENCY BAND
JESD-30 Code
S-CDFM-F2
JESD-609 Code
e4
Number of Elements
1
Number of Terminals
2
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
200 °C
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Package Shape
SQUARE
Package Style
FLANGE MOUNT
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity/Channel Type
N-CHANNEL
Power Gain-Min (Gp)
18 dB
Surface Mount
YES
Terminal Finish
Gold (Au)
Terminal Form
FLAT
Terminal Position
DUAL
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Application
AMPLIFIER
Transistor Element Material
SILICON
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    Wolfspeed
    RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET,
    VS

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