Datasheets
PTF10021 by: Ericsson

RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 20237, 3 PIN

Part Details for PTF10021 by Ericsson

Overview of PTF10021 by Ericsson

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Part Details for PTF10021

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PTF10021 Part Data Attributes:

PTF10021 Ericsson
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PTF10021 Ericsson RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 20237, 3 PIN
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer ERICSSON POWER MODULES AB
Package Description FLANGE MOUNT, R-CDFM-F2
Pin Count 3
Reach Compliance Code unknown
ECCN Code EAR99
Additional Feature HIGH RELIABILITY
Case Connection SOURCE
Configuration SINGLE
DS Breakdown Voltage-Min 65 V
FET Technology METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band L BAND
JESD-30 Code R-CDFM-F2
JESD-609 Code e0
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 105 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish TIN LEAD
Terminal Form FLAT
Terminal Position DUAL
Transistor Application AMPLIFIER
Transistor Element Material SILICON

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