Part Details for PTF081301F by Infineon Technologies AG
Results Overview of PTF081301F by Infineon Technologies AG
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
PTF081301F Information
PTF081301F by Infineon Technologies AG is an RF Power Field-Effect Transistor.
RF Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for PTF081301F
PTF081301F CAD Models
PTF081301F Part Data Attributes
|
PTF081301F
Infineon Technologies AG
Buy Now
Datasheet
|
Compare Parts:
PTF081301F
Infineon Technologies AG
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 31248, 2 PIN
Select a part to compare: |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | FLATPACK, R-CDFP-F2 | |
Pin Count | 2 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Additional Feature | HIGH RELIABILITY | |
Configuration | SINGLE | |
DS Breakdown Voltage-Min | 65 V | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Highest Frequency Band | ULTRA HIGH FREQUENCY BAND | |
JESD-30 Code | R-CDFP-F2 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
Package Shape | RECTANGULAR | |
Package Style | FLATPACK | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 473 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | FLAT | |
Terminal Position | DUAL | |
Transistor Application | AMPLIFIER | |
Transistor Element Material | SILICON |