Datasheets
PTF081301F by: Infineon Technologies AG

RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 31248, 2 PIN

Part Details for PTF081301F by Infineon Technologies AG

Results Overview of PTF081301F by Infineon Technologies AG

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Applications Consumer Electronics Audio and Video Systems Renewable Energy

PTF081301F Information

PTF081301F by Infineon Technologies AG is an RF Power Field-Effect Transistor.
RF Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Part Details for PTF081301F

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PTF081301F Part Data Attributes

PTF081301F Infineon Technologies AG
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PTF081301F Infineon Technologies AG RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 31248, 2 PIN
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Part Life Cycle Code Transferred
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description FLATPACK, R-CDFP-F2
Pin Count 2
Reach Compliance Code compliant
ECCN Code EAR99
Additional Feature HIGH RELIABILITY
Configuration SINGLE
DS Breakdown Voltage-Min 65 V
FET Technology METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band ULTRA HIGH FREQUENCY BAND
JESD-30 Code R-CDFP-F2
JESD-609 Code e3
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape RECTANGULAR
Package Style FLATPACK
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 473 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form FLAT
Terminal Position DUAL
Transistor Application AMPLIFIER
Transistor Element Material SILICON