Transistors Power Field-Effect Transistors PSMN8R2-80YS

PSMN8R2-80YS by

Description: TRANSISTOR 82 A, 80 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-235, PLASTIC, LFPAK-4, FET General Purpose Power

Overview of PSMN8R2-80YS by NXP Semiconductors

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Show differences only	PSMN8R2-80YS NXP Semiconductors Buy Now	part-to-be-compared NXP Semiconductors Buy Now
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Rohs Code	Yes
Part Life Cycle Code	Transferred
Ihs Manufacturer	NXP SEMICONDUCTORS
Package Description	PLASTIC, LFPAK-4
Pin Count	235
Reach Compliance Code	not_compliant
ECCN Code	EAR99
Avalanche Energy Rating (Eas)	120 mJ
Case Connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	80 V
Drain Current-Max (ID)	82 A
Drain-source On Resistance-Max	0.0085 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code	MO-235
JESD-30 Code	R-PSSO-G4
JESD-609 Code	e3
Moisture Sensitivity Level	1
Number of Elements	1
Number of Terminals	4
Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	175 °C
Package Body Material	PLASTIC/EPOXY
Package Shape	RECTANGULAR
Package Style	SMALL OUTLINE
Peak Reflow Temperature (Cel)	260
Polarity/Channel Type	N-CHANNEL
Power Dissipation-Max (Abs)	130 W
Pulsed Drain Current-Max (IDM)	326 A
Qualification Status	Not Qualified
Surface Mount	YES
Terminal Finish	Tin (Sn)
Terminal Form	GULL WING
Terminal Position	SINGLE
Time@Peak Reflow Temperature-Max (s)	30
Transistor Application	SWITCHING
Transistor Element Material	SILICON

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