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PSMN8R0-30YL,115 by:

PSMN8R0-30YL - N-channel 8.3 mΩ 30 V TrenchMOS logic level FET in LFPAK SOIC 4-Pin

Part Details for PSMN8R0-30YL,115 by NXP Semiconductors

Overview of PSMN8R0-30YL,115 by NXP Semiconductors

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Applications Energy and Power Systems Medical Imaging Robotics and Drones

Part Details for PSMN8R0-30YL,115

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PSMN8R0-30YL,115 Part Data Attributes

PSMN8R0-30YL,115 NXP Semiconductors
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PSMN8R0-30YL,115 NXP Semiconductors PSMN8R0-30YL - N-channel 8.3 mΩ 30 V TrenchMOS logic level FET in LFPAK SOIC 4-Pin
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer NXP SEMICONDUCTORS
Part Package Code SOIC
Pin Count 4
Manufacturer Package Code SOT669
Reach Compliance Code not_compliant
ECCN Code EAR99
Configuration SINGLE
Drain Current-Max (ID) 62 A
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 56 W
Surface Mount YES
Terminal Finish TIN
Time@Peak Reflow Temperature-Max (s) 30

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