Part Details for PSMN8R0-30YL,115 by NXP Semiconductors
Overview of PSMN8R0-30YL,115 by NXP Semiconductors
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- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Medical Imaging
Robotics and Drones
Part Details for PSMN8R0-30YL,115
PSMN8R0-30YL,115 CAD Models
PSMN8R0-30YL,115 Part Data Attributes
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PSMN8R0-30YL,115
NXP Semiconductors
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Datasheet
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PSMN8R0-30YL,115
NXP Semiconductors
PSMN8R0-30YL - N-channel 8.3 mΩ 30 V TrenchMOS logic level FET in LFPAK SOIC 4-Pin
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | NXP SEMICONDUCTORS | |
Part Package Code | SOIC | |
Pin Count | 4 | |
Manufacturer Package Code | SOT669 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Configuration | SINGLE | |
Drain Current-Max (ID) | 62 A | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 56 W | |
Surface Mount | YES | |
Terminal Finish | TIN | |
Time@Peak Reflow Temperature-Max (s) | 30 |