Datasheets
PSMN3R8-30LL by:
NXP Semiconductors
Hongxing Electrical Ltd
Nexperia
NXP Semiconductors
Not Found

TRANSISTOR 40 A, 30 V, 0.0058 ohm, N-CHANNEL, Si, POWER, MOSFET, 3.30 X 3.30 MM, 1 MM HEIGHT, PLASTIC, QFN3333, 8 PIN, FET General Purpose Power

Part Details for PSMN3R8-30LL by NXP Semiconductors

Results Overview of PSMN3R8-30LL by NXP Semiconductors

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Applications Consumer Electronics Energy and Power Systems Renewable Energy Automotive

PSMN3R8-30LL Information

PSMN3R8-30LL by NXP Semiconductors is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Part Details for PSMN3R8-30LL

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PSMN3R8-30LL Part Data Attributes

PSMN3R8-30LL NXP Semiconductors
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PSMN3R8-30LL NXP Semiconductors TRANSISTOR 40 A, 30 V, 0.0058 ohm, N-CHANNEL, Si, POWER, MOSFET, 3.30 X 3.30 MM, 1 MM HEIGHT, PLASTIC, QFN3333, 8 PIN, FET General Purpose Power
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Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer NXP SEMICONDUCTORS
Part Package Code QFN
Package Description SMALL OUTLINE, S-PDSO-N5
Pin Count 8
Reach Compliance Code unknown
ECCN Code EAR99
Additional Feature LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas) 109 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 40 A
Drain-source On Resistance-Max 0.0058 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code S-PDSO-N5
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 5
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape SQUARE
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 413 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Form NO LEAD
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

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