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PSMN3R3-40YS by:

Power Field-Effect Transistor

Part Details for PSMN3R3-40YS by Nexperia

Overview of PSMN3R3-40YS by Nexperia

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Part Details for PSMN3R3-40YS

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PSMN3R3-40YS Part Data Attributes

PSMN3R3-40YS Nexperia
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PSMN3R3-40YS Nexperia Power Field-Effect Transistor
Rohs Code Yes
Part Life Cycle Code Not Recommended
Ihs Manufacturer NEXPERIA
Package Description SMALL OUTLINE, R-PSSO-G4
Reach Compliance Code not_compliant
ECCN Code EAR99
Date Of Intro 2017-02-01
Samacsys Manufacturer Nexperia
Avalanche Energy Rating (Eas) 162 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 40 V
Drain Current-Max (ID) 100 A
Drain-source On Resistance-Max 0.0033 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code MO-235
JESD-30 Code R-PSSO-G4
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 546 A
Surface Mount YES
Terminal Finish TIN
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for PSMN3R3-40YS

This table gives cross-reference parts and alternative options found for PSMN3R3-40YS. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of PSMN3R3-40YS, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
PSMN3R3-40YS 100A, 40V, 0.0033ohm, N-CHANNEL, Si, POWER, MOSFET, MO-235, PLASTIC, LFPAK-4 NXP Semiconductors PSMN3R3-40YS vs PSMN3R3-40YS
PH1955L,115 PH1955L - N-channel TrenchMOS logic level FET@en-us SOIC 4-Pin Nexperia PSMN3R3-40YS vs PH1955L,115
PSMN020-100YS TRANSISTOR 43 A, 100 V, 0.0205 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-235, PLASTIC, LFPAK-4, FET General Purpose Power NXP Semiconductors PSMN3R3-40YS vs PSMN020-100YS
PH1955L Power Field-Effect Transistor Nexperia PSMN3R3-40YS vs PH1955L
PH20100S,115 PH20100S - N-channel TrenchMOS standard level FET SOIC 4-Pin NXP Semiconductors PSMN3R3-40YS vs PH20100S,115
PSMN017-60YS 44A, 60V, 0.0157ohm, N-CHANNEL, Si, POWER, MOSFET, MO-235, PLASTIC, LFPAK-4 NXP Semiconductors PSMN3R3-40YS vs PSMN017-60YS
PSMN020-100YS Power Field-Effect Transistor, 43A I(D), 100V, 0.0205ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-235 Nexperia PSMN3R3-40YS vs PSMN020-100YS
PHM30NQ10T TRANSISTOR 37.6 A, 100 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, 6 X 5 X 0.85, PLASTIC, SOT-685-1, QLPAK, HVSON-8, FET General Purpose Power NXP Semiconductors PSMN3R3-40YS vs PHM30NQ10T
PHM25NQ10T,518 PHM25NQ10T NXP Semiconductors PSMN3R3-40YS vs PHM25NQ10T,518
PSMN8R5-60YS TRANSISTOR 76 A, 60 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-235, PLASTIC, LFPAK-4, FET General Purpose Power NXP Semiconductors PSMN3R3-40YS vs PSMN8R5-60YS

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