PSMN3R3-100SSF
Nexperia
Description: Power Field-Effect Transistor

Overview of PSMN3R3-100SSF by Nexperia

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  • Distributor Offerings: ( 1 listing )
  • Number of FFF Equivalents: ( 0 replacements )
  • CAD Models: ( Request Part )
  • Number of Functional Equivalents: ( 0 options )
  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )

Price & Stock for PSMN3R3-100SSF by Nexperia

Part # Manufacturer Description Stock Price Buy
DISTI # 12AM9304
Newark Mosfet, N Channel, 100V, 180A, Lfpak88-4 Rohs Compliant: Yes |Nexperia PSMN3R3-100SSF RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape 500
  • 1 $4.2700
  • 10 $3.7600
  • 25 $3.4500
  • 50 $3.1200
  • 100 $2.7100
  • 250 $2.1500
  • 500 $2.0400
  • 1,000 $1.9200
$1.9200 / $4.2700 Buy Now

CAD Models for PSMN3R3-100SSF by Nexperia
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Part Data Attributes for PSMN3R3-100SSF by Nexperia

PSMN3R3-100SSF
Nexperia
-
-
Rohs Code
Yes
Part Life Cycle Code
Active
Ihs Manufacturer
NEXPERIA
Reach Compliance Code
unknown
ECCN Code
EAR99
Date Of Intro
2020-06-09
Additional Feature
AVALANCHE RATED
Avalanche Energy Rating (Eas)
478 mJ
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
100 V
Drain Current-Max (ID)
180 A
Drain-source On Resistance-Max
0.005 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)
107 pF
JESD-30 Code
R-PSSO-G4
JESD-609 Code
e3
Moisture Sensitivity Level
1
Number of Elements
1
Number of Terminals
4
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
175 °C
Operating Temperature-Min
-55 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
341 W
Pulsed Drain Current-Max (IDM)
848 A
Reference Standard
IEC-60134
Surface Mount
YES
Terminal Finish
TIN
Terminal Form
GULL WING
Terminal Position
SINGLE
Time@Peak Reflow Temperature-Max (s)
30
Transistor Application
SWITCHING
Transistor Element Material
SILICON
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