Datasheets
PSMN3R0-30MLC,115 by:
NXP Semiconductors
Inventronics (Hangzhou) Inc
Nexperia
NXP Semiconductors
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PSMN3R0-30MLC - N-channel 30 V 3.15mΩ logic level MOSFET in LFPAK33 using NextPower Technology

Part Details for PSMN3R0-30MLC,115 by NXP Semiconductors

Results Overview of PSMN3R0-30MLC,115 by NXP Semiconductors

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PSMN3R0-30MLC,115 Information

PSMN3R0-30MLC,115 by NXP Semiconductors is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for PSMN3R0-30MLC,115

Part # Distributor Description Stock Price Buy
Rochester Electronics PSMN3R0-30MLC - 70A, 30V, 0.00405ohm, N-Channel Power MOSFET, MLFPAK RoHS: Compliant Status: Active Min Qty: 1 1046
  • 1 $0.2558
  • 25 $0.2507
  • 100 $0.2405
  • 500 $0.2302
  • 1,000 $0.2174
$0.2174 / $0.2558 Buy Now

Part Details for PSMN3R0-30MLC,115

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PSMN3R0-30MLC,115 Part Data Attributes

PSMN3R0-30MLC,115 NXP Semiconductors
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PSMN3R0-30MLC,115 NXP Semiconductors PSMN3R0-30MLC - N-channel 30 V 3.15mΩ logic level MOSFET in LFPAK33 using NextPower Technology
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Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer NXP SEMICONDUCTORS
Pin Count 8
Manufacturer Package Code SOT1210
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 4 Weeks
Configuration SINGLE
Drain Current-Max (ID) 70 A
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 88 W
Surface Mount YES
Terminal Finish TIN
Time@Peak Reflow Temperature-Max (s) 30

PSMN3R0-30MLC,115 Related Parts

PSMN3R0-30MLC,115 Frequently Asked Questions (FAQ)

  • The recommended PCB footprint for PSMN3R0-30MLC,115 is a D2PAK (TO-263) package with a minimum pad size of 4.5mm x 5.5mm and a thermal pad size of 2.5mm x 2.5mm.

  • To ensure reliable operation in high-temperature environments, it is recommended to follow proper thermal design and management practices, such as providing adequate heat sinking, using thermal interface materials, and ensuring good airflow around the device.

  • The maximum allowed voltage on the gate pin of PSMN3R0-30MLC,115 is 20V, with a recommended maximum voltage of 15V to ensure reliable operation.

  • Yes, PSMN3R0-30MLC,115 is suitable for high-frequency switching applications, but it's essential to consider the device's switching characteristics, such as rise and fall times, and ensure that the application's switching frequency is within the device's recommended operating range.

  • To protect PSMN3R0-30MLC,115 from ESD, it is recommended to follow proper handling and storage procedures, such as using ESD-safe materials, grounding oneself before handling the device, and using ESD protection devices in the circuit design.