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Part Details for PSMN2R8-40YSDX by Nexperia
Overview of PSMN2R8-40YSDX by Nexperia
- Distributor Offerings: (14 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for PSMN2R8-40YSDX
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
39AH0950
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Newark | Mosfet, N-Ch, 40V, 160A, 175Deg C, 147W Rohs Compliant: Yes |Nexperia PSMN2R8-40YSDX RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 0 |
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$0.6480 / $0.8740 | Buy Now |
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DISTI #
1727-PSMN2R8-40YSDXCT-ND
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DigiKey | MOSFET N-CH 40V 160A LFPAK56 Min Qty: 1 Lead time: 13 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
7384 In Stock |
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$0.5813 / $1.7400 | Buy Now |
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DISTI #
PSMN2R8-40YSDX
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Avnet Americas | Transistor MOSFET N-CH 40V 160A 4-Pin PowerSO8 T/R - Tape and Reel (Alt: PSMN2R8-40YSDX) Min Qty: 3000 Package Multiple: 1500 Lead time: 13 Weeks, 0 Days Container: Reel | 0 |
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$0.2981 / $0.3384 | Buy Now |
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DISTI #
771-PSMN2R8-40YSDX
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Mouser Electronics | MOSFETs PSMN2R8-40YSD/SOT669/LFPAK RoHS: Compliant | 2999 |
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$0.4670 / $0.8400 | Buy Now |
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DISTI #
E02:0323_14534311
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Arrow Electronics | Trans MOSFET N-CH 40V 160A 5-Pin(4+Tab) LFPAK T/R Min Qty: 3000 Package Multiple: 1500 Lead time: 13 Weeks Date Code: 2430 | Europe - 3000 |
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$0.4271 / $0.4312 | Buy Now |
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Future Electronics | N-Channel 40 V 160 A147 W 2.8 mOhm Surface Mount Mosfet - LFPAK56 RoHS: Compliant pbFree: Yes Min Qty: 1500 Package Multiple: 1500 Lead time: 13 Weeks Container: Reel | 0Reel |
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$0.3100 / $0.3300 | Buy Now |
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DISTI #
83151565
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Verical | Trans MOSFET N-CH 40V 160A 5-Pin(4+Tab) LFPAK T/R Min Qty: 3000 Package Multiple: 3000 Date Code: 2430 | Americas - 3000 |
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$0.4280 / $0.4321 | Buy Now |
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Rochester Electronics | PSMN2R8-40YSD - N-channel 40 V, 2.8 mOhm, 160 A standard level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology RoHS: Compliant Status: Active Min Qty: 1 | 3000 |
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RFQ | |
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DISTI #
PSMN2R8-40YSDX
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TTI | MOSFETs PSMN2R8-40YSD/SOT669/LFPAK RoHS: Compliant pbFree: Pb-Free Min Qty: 3000 Package Multiple: 1500 Container: Reel | Americas - 0 |
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$0.3220 / $0.3290 | Buy Now |
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DISTI #
PSMN2R8-40YSDX
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TME | Transistor: N-MOSFET, NextPowerS3, unipolar, 40V, 119A, Idm: 658A Min Qty: 1 | 0 |
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$0.4460 / $0.9560 | RFQ |
Part Details for PSMN2R8-40YSDX
PSMN2R8-40YSDX CAD Models
PSMN2R8-40YSDX Part Data Attributes
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PSMN2R8-40YSDX
Nexperia
Buy Now
Datasheet
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Compare Parts:
PSMN2R8-40YSDX
Nexperia
PSMN2R8-40YSD - N-channel 40 V, 2.8 mΩ, 160 A standard level MOSFET in LFPAK56 using NextPower-S3tttSchottky-Plus technology@en-us SOIC 4-Pin
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | NEXPERIA | |
| Part Package Code | SOIC | |
| Package Description | SOT-669, SOP-8, 4 PIN | |
| Pin Count | 4 | |
| Manufacturer Package Code | SOT669 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 13 Weeks | |
| Samacsys Manufacturer | Nexperia | |
| Additional Feature | AVALANCHE RATED, HIGH RELIABILITY | |
| Avalanche Energy Rating (Eas) | 452 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 40 V | |
| Drain Current-Max (ID) | 160 A | |
| Drain-source On Resistance-Max | 0.0028 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 337 pF | |
| JEDEC-95 Code | MO-235 | |
| JESD-30 Code | R-PSSO-G4 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 4 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 147 W | |
| Pulsed Drain Current-Max (IDM) | 658 A | |
| Reference Standard | IEC-60134 | |
| Surface Mount | YES | |
| Terminal Finish | TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |