Part Details for PSMN1R7-30YL,115 by NXP Semiconductors
Overview of PSMN1R7-30YL,115 by NXP Semiconductors
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (3 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (3 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for PSMN1R7-30YL,115
Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 54 |
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RFQ | ||
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Rochester Electronics | Nexperia PSMN1R7-30YL - 100A, 30V, 0.0021ohm, N-Channel Power MOSFET, LFPAK RoHS: Compliant Status: Active Min Qty: 1 | 85 |
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$0.5015 / $0.5900 | Buy Now |
Part Details for PSMN1R7-30YL,115
PSMN1R7-30YL,115 CAD Models
PSMN1R7-30YL,115 Part Data Attributes
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PSMN1R7-30YL,115
NXP Semiconductors
Buy Now
Datasheet
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Compare Parts:
PSMN1R7-30YL,115
NXP Semiconductors
PSMN1R7-30YL - N-channel 30 V 1.7 mΩ logic level MOSFET in LFPAK SOIC 4-Pin
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Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | NXP SEMICONDUCTORS | |
Part Package Code | SOIC | |
Package Description | PLASTIC, LFPAK-5 | |
Pin Count | 4 | |
Manufacturer Package Code | SOT669 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.75 | |
Avalanche Energy Rating (Eas) | 241 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 100 A | |
Drain-source On Resistance-Max | 0.0026 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | MO-235 | |
JESD-30 Code | R-PSSO-G4 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 4 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 109 W | |
Pulsed Drain Current-Max (IDM) | 790 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for PSMN1R7-30YL,115
This table gives cross-reference parts and alternative options found for PSMN1R7-30YL,115. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of PSMN1R7-30YL,115, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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PSMN1R7-30YL,115 | PSMN1R7-30YL - N-channel 30 V 1.7 mΩ logic level MOSFET in LFPAK@en-us SOIC 4-Pin | Nexperia | PSMN1R7-30YL,115 vs PSMN1R7-30YL,115 |
PSMN1R7-30YL | Power Field-Effect Transistor | Nexperia | PSMN1R7-30YL,115 vs PSMN1R7-30YL |
PSMN1R7-30YL | TRANSISTOR 100 A, 30 V, 0.0021 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-235, PLASTIC, POWER, SO8, LFPAK-4, FET General Purpose Power | NXP Semiconductors | PSMN1R7-30YL,115 vs PSMN1R7-30YL |