Part Details for PSMN1R2-25YL,115 by NXP Semiconductors
Overview of PSMN1R2-25YL,115 by NXP Semiconductors
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (3 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (3 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for PSMN1R2-25YL,115
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SMC-PSMN1R2-25YL,115
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Sensible Micro Corporation | AS6081 Certified Vendor, 1 Yr Warranty RoHS: Not Compliant Min Qty: 25 Lead time: 2 Weeks, 0 Days | 1059 |
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RFQ |
Part Details for PSMN1R2-25YL,115
PSMN1R2-25YL,115 CAD Models
PSMN1R2-25YL,115 Part Data Attributes
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PSMN1R2-25YL,115
NXP Semiconductors
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Datasheet
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PSMN1R2-25YL,115
NXP Semiconductors
PSMN1R2-25YL - N-channel 25 V 1.2 mΩ logic level MOSFET in LFPAK SOIC 4-Pin
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| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | NXP SEMICONDUCTORS | |
| Part Package Code | SOIC | |
| Package Description | ROHS COMPLIANT, PLASTIC, LFPAK-4 | |
| Pin Count | 4 | |
| Manufacturer Package Code | SOT1023 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.75 | |
| Avalanche Energy Rating (Eas) | 677 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 25 V | |
| Drain Current-Max (ID) | 100 A | |
| Drain-source On Resistance-Max | 0.00185 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSSO-G4 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 121 W | |
| Pulsed Drain Current-Max (IDM) | 815 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for PSMN1R2-25YL,115
This table gives cross-reference parts and alternative options found for PSMN1R2-25YL,115. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of PSMN1R2-25YL,115, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| PSMN1R2-25YL,115 | PSMN1R2-25YL - N-channel 25 V 1.2 mΩ logic level MOSFET in LFPAK@en-us SOIC 4-Pin | Nexperia | PSMN1R2-25YL,115 vs PSMN1R2-25YL,115 |
| PSMN1R2-25YL | Power Field-Effect Transistor, 100A I(D), 25V, 0.00185ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Nexperia | PSMN1R2-25YL,115 vs PSMN1R2-25YL |
| PSMN1R2-25YL | TRANSISTOR 100 A, 25 V, 0.00185 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, PLASTIC, LFPAK-4, FET General Purpose Power | NXP Semiconductors | PSMN1R2-25YL,115 vs PSMN1R2-25YL |