Part Details for PSMN059-150Y by NXP Semiconductors
Overview of PSMN059-150Y by NXP Semiconductors
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (3 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (3 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for PSMN059-150Y
| Part # | Distributor | Description | Stock | Price | Buy | |
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Chip1Cloud | N-channel TrenchMOS standard level FET | 22550 |
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RFQ | |
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Win Source Electronics | N-channel TrenchMOS standard level FET | 28000 |
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$0.8990 / $1.1310 | Buy Now |
Part Details for PSMN059-150Y
PSMN059-150Y CAD Models
PSMN059-150Y Part Data Attributes
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PSMN059-150Y
NXP Semiconductors
Buy Now
Datasheet
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Compare Parts:
PSMN059-150Y
NXP Semiconductors
TRANSISTOR 43 A, 150 V, 0.059 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-235, PLASTIC, LFPAK-4, FET General Purpose Power
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | NXP SEMICONDUCTORS | |
| Package Description | PLASTIC, LFPAK-4 | |
| Pin Count | 235 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | NXP | |
| Avalanche Energy Rating (Eas) | 255 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 150 V | |
| Drain Current-Max (ID) | 43 A | |
| Drain-source On Resistance-Max | 0.059 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | MO-235 | |
| JESD-30 Code | R-PSSO-G4 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 113 W | |
| Pulsed Drain Current-Max (IDM) | 129 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for PSMN059-150Y
This table gives cross-reference parts and alternative options found for PSMN059-150Y. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of PSMN059-150Y, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| PSMN059-150Y | Power Field-Effect Transistor, 43A I(D), 150V, 0.059ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-235 | Nexperia | PSMN059-150Y vs PSMN059-150Y |
| PSMN059-150Y,115 | N-channel TrenchMOS SiliconMAX standard level FET@en-us SOIC 4-Pin | Nexperia | PSMN059-150Y vs PSMN059-150Y,115 |
| PSMN059-150Y,115 | N-channel TrenchMOS SiliconMAX standard level FET SOIC 4-Pin | NXP Semiconductors | PSMN059-150Y vs PSMN059-150Y,115 |