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PSMN027-100PS - N-channel 100V 26.8 mΩ standard level MOSFET in TO220.@en-us TO-220 3-Pin
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
1727-4658-ND
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DigiKey | MOSFET N-CH 100V 37A TO220AB Min Qty: 1 Lead time: 8 Weeks Container: Tube |
13704 In Stock |
|
$0.7334 / $2.0800 | Buy Now |
DISTI #
V36:1790_06540805
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Arrow Electronics | Trans MOSFET N-CH 100V 37A 3-Pin(3+Tab) TO-220AB Rail Min Qty: 1 Package Multiple: 1 Lead time: 99 Weeks Date Code: 2231 | Americas - 27092 |
|
$0.6925 | Buy Now |
DISTI #
V79:2366_28604913
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Arrow Electronics | Trans MOSFET N-CH 100V 37A 3-Pin(3+Tab) TO-220AB Rail Min Qty: 139 Package Multiple: 1 Date Code: 2217 | Americas - 23555 |
|
$0.7241 / $0.8593 | Buy Now |
DISTI #
66970624
|
Verical | Trans MOSFET N-CH 100V 37A 3-Pin(3+Tab) TO-220AB Rail Min Qty: 9 Package Multiple: 1 Date Code: 2231 | Americas - 27092 |
|
$0.6925 | Buy Now |
DISTI #
70354264
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Verical | Trans MOSFET N-CH 100V 37A 3-Pin(3+Tab) TO-220AB Rail Min Qty: 139 Package Multiple: 1 Date Code: 2217 | Americas - 23555 |
|
$0.7241 / $0.8593 | Buy Now |
|
Rochester Electronics | Power Field-Effect Transistor, 37A, 100V, 0.0268ohm, N-Channel MOSFET TO-220AB RoHS: Compliant Status: End of Life / Last Time Buy Min Qty: 1 | 50000 |
|
RFQ | |
DISTI #
PSMN027-100PS.127
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TME | Transistor: N-MOSFET, unipolar, 100V, 37A, Idm: 148A, 103W Min Qty: 1 | 9 |
|
$1.0300 / $1.5600 | Buy Now |
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PSMN027-100PS,127
Nexperia
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Datasheet
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PSMN027-100PS,127
Nexperia
PSMN027-100PS - N-channel 100V 26.8 mΩ standard level MOSFET in TO220.@en-us TO-220 3-Pin
|
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | NEXPERIA | |
Part Package Code | TO-220 | |
Package Description | FLANGE MOUNT, R-PSFM-T3 | |
Pin Count | 3 | |
Manufacturer Package Code | SOT78 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Nexperia | |
Avalanche Energy Rating (Eas) | 59 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 37 A | |
Drain-source On Resistance-Max | 0.0268 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 148 A | |
Surface Mount | NO | |
Terminal Finish | TIN | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |