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Transistors / Power Field-Effect Transistors / PSMN017-80BS,118
Datasheets
PSMN017-80BS,118 by:
Nexperia
Nexperia
NXP Semiconductors
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PSMN017-80BS - N-channel 80 V 17 mΩ standard level MOSFET in D2PAK@en-us D2PAK 3-Pin

Part Details for PSMN017-80BS,118 by Nexperia

Results Overview of PSMN017-80BS,118 by Nexperia

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PSMN017-80BS,118 Information

PSMN017-80BS,118 by Nexperia is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for PSMN017-80BS,118

Part # Distributor Description Stock Price Buy
DISTI # 74AH1183
Newark Mosfet, N-Ch, 80V, 50A, To-263 Rohs Compliant: Yes |Nexperia PSMN017-80BS,118 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape 0
  • 1 $1.1400
  • 10 $1.0000
  • 25 $0.9160
  • 50 $0.8280
  • 100 $0.7400
  • 250 $0.7200
  • 500 $0.6990
  • 1,600 $0.5540
$0.5540 / $1.1400 Buy Now
DISTI # 1727-7209-1-ND
DigiKey MOSFET N-CH 80V 50A D2PAK Min Qty: 1 Lead time: 10 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 5485
In Stock
  • 1 $2.1300
  • 10 $1.3630
  • 100 $0.9238
  • 800 $0.6936
  • 1,600 $0.6398
  • 2,400 $0.6125
  • 4,000 $0.5817
  • 5,600 $0.5730
$0.5730 / $2.1300 Buy Now
DISTI # PSMN017-80BS,118
Avnet Americas Trans MOSFET N-CH 80V 50A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: PSMN017-80BS,118) Min Qty: 4800 Package Multiple: 800 Lead time: 10 Weeks, 0 Days Container: Reel 0
  • 4,800 $0.6097
  • 6,400 $0.6005
  • 11,200 $0.5913
  • 24,000 $0.5822
  • 48,000 $0.5730
$0.5730 / $0.6097 Buy Now
DISTI # 771-PSMN017-80BS,118
Mouser Electronics MOSFETs N-channel LFPAK 80 V 18 mΩ standard level MOSFET RoHS: Compliant 0
  • 800 $0.5730
  • 4,800 $0.5730
$0.5730 Order Now
Future Electronics MOSFETs PSMN017-80BS/SOT404/D2PAK RoHS: Not Compliant pbFree: Yes Min Qty: 1600 Package Multiple: 800 Lead time: 10 Weeks 0
  • 1,600 $0.6160
  • 2,400 $0.6110
  • 3,200 $0.6070
  • 4,000 $0.5960
$0.5960 / $0.6160 Buy Now
DISTI # PSMN017-80BS.118
TME Transistor: N-MOSFET, unipolar, 80V, 50A, Idm: 200A, 103W Min Qty: 1 0
  • 1 $1.0700
  • 5 $0.9500
  • 25 $0.8500
  • 100 $0.7700
  • 800 $0.7100
$0.7100 / $1.0700 RFQ
DISTI # PSMN017-80BS,118
Avnet Silica Trans MOSFET NCH 80V 50A 3Pin2Tab D2PAK TR (Alt: PSMN017-80BS,118) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 12 Weeks, 0 Days Silica - 11200
Buy Now
DISTI # PSMN017-80BS,118
EBV Elektronik Trans MOSFET NCH 80V 50A 3Pin2Tab D2PAK TR (Alt: PSMN017-80BS,118) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 12 Weeks, 0 Days EBV - 0
Buy Now

Part Details for PSMN017-80BS,118

PSMN017-80BS,118 CAD Models

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PSMN017-80BS,118 Part Data Attributes

Parametric Data
PSMN017-80BS,118 Nexperia
Buy Now Datasheet
Compare Parts:
PSMN017-80BS,118 Nexperia PSMN017-80BS - N-channel 80 V 17 mΩ standard level MOSFET in D2PAK@en-us D2PAK 3-Pin
Select a part to compare:
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer NEXPERIA
Part Package Code D2PAK
Package Description D2PAK-3/2
Pin Count 3
Manufacturer Package Code SOT404
Reach Compliance Code not_compliant
ECCN Code EAR99
Samacsys Manufacturer Nexperia
Avalanche Energy Rating (Eas) 55 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 80 V
Drain Current-Max (ID) 50 A
Drain-source On Resistance-Max 0.017 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 245
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 200 A
Reference Standard IEC-60134
Surface Mount YES
Terminal Finish TIN
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

PSMN017-80BS,118 Frequently Asked Questions (FAQ)

  • The recommended PCB footprint for PSMN017-80BS,118 is a D2PAK (TO-263) package with a minimum pad size of 6.5mm x 5.5mm and a thermal pad size of 4.5mm x 4.5mm.

  • To ensure reliable operation in high-temperature environments, it's essential to provide adequate heat sinking, ensure good thermal conductivity between the device and the heat sink, and follow the recommended derating curves for the device.

  • The maximum allowed voltage on the gate of PSMN017-80BS,118 is ±20V, but it's recommended to keep the gate voltage between -5V and +15V for reliable operation.

  • Yes, you can use multiple PSMN017-80BS,118 devices in parallel to increase current handling, but it's crucial to ensure that the devices are properly matched, and the gate drive signals are synchronized to prevent uneven current sharing.

  • To protect PSMN017-80BS,118 from ESD, handle the devices with anti-static wrist straps, mats, or bags, and ensure that the PCB design includes ESD protection components, such as TVS diodes or ESD protection arrays.