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Transistors / Power Field-Effect Transistors / PSMN013-80YS,115
Datasheets
PSMN013-80YS,115 by:

PSMN013-80YS - N-channel LFPAK 80 V 12.9 mΩ standard level MOSFET@en-us SOIC 4-Pin

Part Details for PSMN013-80YS,115 by Nexperia

Overview of PSMN013-80YS,115 by Nexperia

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for PSMN013-80YS,115

Part # Distributor Description Stock Price Buy
DISTI # 1727-4279-1-ND
DigiKey MOSFET N-CH 80V 60A LFPAK56 Min Qty: 1 Lead time: 6 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) 5275
In Stock
  • 1 $1.3200
  • 10 $0.8900
  • 100 $0.6218
  • 500 $0.5016
  • 1,500 $0.4049
$0.4049 / $1.3200 Buy Now
DISTI # PSMN013-80YS,115
Avnet Americas Trans MOSFET N-CH 80V 60A 5-Pin(4+Tab) LFPAK T/R - Tape and Reel (Alt: PSMN013-80YS,115) RoHS: Compliant Min Qty: 3000 Package Multiple: 1500 Lead time: 6 Weeks, 0 Days Container: Reel 0
  • 3,000 $0.4695
  • 6,000 $0.3909
  • 9,000 $0.3879
  • 15,000 $0.3849
  • 30,000 $0.3819
  • 1,500,000 $0.3470
  • 3,000,000 $0.3470
  • 15,000,000 $0.3470
$0.3470 / $0.4695 Buy Now
DISTI # 771-PSMN013-80YS,115
Mouser Electronics MOSFETs PSMN013-80YS/SOT669/LFPAK RoHS: Compliant 460
  • 1 $1.0500
  • 10 $0.8460
  • 100 $0.6520
  • 500 $0.5530
  • 1,000 $0.4840
  • 1,500 $0.4110
  • 3,000 $0.4050
  • 9,000 $0.4040
$0.4040 / $1.0500 Buy Now
Future Electronics N-Channel 80 V 60 A 12.9 mOhm 148 mW SMT Standard Level Mosfet - LFPAK56 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 1500 Lead time: 13 Weeks 0
  • 3,000 $0.3930
$0.3930 Buy Now
DISTI # PSMN013-80YS.115
TME Transistor: N-MOSFET, unipolar, 80V, 60A, Idm: 233A, 106W Min Qty: 1 0
  • 1 $0.8610
  • 5 $0.7760
  • 25 $0.6840
  • 100 $0.6150
  • 500 $0.5740
$0.5740 / $0.8610 RFQ
DISTI # PSMN013-80YS,115
Avnet Asia Trans MOSFET N-CH 80V 60A 5-Pin(4+Tab) LFPAK T/R (Alt: PSMN013-80YS,115) RoHS: Compliant Min Qty: 3000 Package Multiple: 1500 Lead time: 6 Weeks, 0 Days 0
  • 3,000 $0.4263
  • 6,000 $0.3979
  • 9,000 $0.3875
  • 15,000 $0.3777
  • 30,000 $0.3684
  • 75,000 $0.3595
  • 150,000 $0.3511
$0.3511 / $0.4263 Buy Now
DISTI # PSMN013-80YS,115
Avnet Silica Trans MOSFET N-CH 80V 60A 5-Pin(4+Tab) LFPAK T/R (Alt: PSMN013-80YS,115) RoHS: Compliant Min Qty: 1500 Package Multiple: 1500 Lead time: 8 Weeks, 0 Days Silica - 0
Buy Now
DISTI # PSMN013-80YS,115
EBV Elektronik Trans MOSFET N-CH 80V 60A 5-Pin(4+Tab) LFPAK T/R (Alt: PSMN013-80YS,115) RoHS: Compliant Min Qty: 1500 Package Multiple: 1500 Lead time: 8 Weeks, 0 Days EBV - 0
Buy Now
New Advantage Corporation Power Field-Effect Transistor,60AI(D),80V,0.00129ohm,1-Element,N-Channel,Silicon,Metal-oxideSemiconductor FET,MO-235 RoHS: Compliant Min Qty: 1 Package Multiple: 1500 3000
  • 1,500 $0.4929
  • 3,000 $0.4600
$0.4600 / $0.4929 Buy Now

Part Details for PSMN013-80YS,115

PSMN013-80YS,115 CAD Models

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PSMN013-80YS,115 Part Data Attributes

Parametric Data
PSMN013-80YS,115 Nexperia
Buy Now Datasheet
Compare Parts:
PSMN013-80YS,115 Nexperia PSMN013-80YS - N-channel LFPAK 80 V 12.9 mΩ standard level MOSFET@en-us SOIC 4-Pin
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer NEXPERIA
Part Package Code SOIC
Package Description LFPAK-4
Pin Count 4
Manufacturer Package Code SOT669
Reach Compliance Code not_compliant
ECCN Code EAR99
Samacsys Manufacturer Nexperia
Avalanche Energy Rating (Eas) 70 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 80 V
Drain Current-Max (ID) 60 A
Drain-source On Resistance-Max 0.00129 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code MO-235
JESD-30 Code R-PSSO-G4
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 233 A
Surface Mount YES
Terminal Finish TIN
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

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