PSMN009-100P
Description: Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

Overview of PSMN009-100P by Philips Semiconductors

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  • Distributor Offerings: ( 0 listings )
  • Number of FFF Equivalents: ( 0 replacements )
  • CAD Models: ( Request Part )
  • Number of Functional Equivalents: ( 0 options )
  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )
Where used in Applications: Consumer Electronics Industrial Automation Energy and Power Systems Renewable Energy Motor control systems

Available Datasheets

Part # Manufacturer Description Datasheet
CLF1G0035-100P Rochester Electronics LLC CLF1G0035-100 - 100W Broadband RF power GaN HEMT
B3221B7L1112A0E100 Amphenol Communications Solutions BTB Connector, P=0.50mm, H=8.4mm, Vertical orientation, Plug, 100P, With MYLAR
B3291B7L1112A0E100 Amphenol Communications Solutions BTB Connector, P=0.50mm, H=5.0mm, Vertical orientation, Socket, 100P, With MYLAR

CAD Models for PSMN009-100P by Philips Semiconductors
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Part Data Attributes for PSMN009-100P by Philips Semiconductors

PSMN009-100P
Philips Semiconductors
-
-
Rohs Code
Yes
Part Life Cycle Code
Transferred
Ihs Manufacturer
PHILIPS SEMICONDUCTORS
Package Description
,
Reach Compliance Code
unknown
ECCN Code
EAR99
Configuration
SINGLE
Drain Current-Max (ID)
75 A
FET Technology
METAL-OXIDE SEMICONDUCTOR
JESD-609 Code
e3
Number of Elements
1
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
175 °C
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
230 W
Surface Mount
NO
Terminal Finish
Matte Tin (Sn)
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    Philips Semiconductors
    Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
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