Datasheets
PMZB290UNE,315 by:
Nexperia
Nexperia
NXP Semiconductors
Not Found

PMZB290UNE - 20 V, single N-channel Trench MOSFET DFN 3-Pin

Part Details for PMZB290UNE,315 by Nexperia

Results Overview of PMZB290UNE,315 by Nexperia

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Applications Consumer Electronics Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

PMZB290UNE,315 Information

PMZB290UNE,315 by Nexperia is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for PMZB290UNE,315

Part # Distributor Description Stock Price Buy
DISTI # 05W5704
Newark Mosfet, N Channel, 20V, 1A, Sot883B, Channel Type:N Channel, Drain Source Voltage Vds:20V, Contin... uous Drain Current Id:1A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:4.5V, Gate Source Threshold Voltage Max:750Mv Rohs Compliant: Yes |Nexperia PMZB290UNE,315 more RoHS: Compliant Min Qty: 5 Package Multiple: 1 Date Code: 0 Container: Bulk 0
Buy Now
DISTI # PMZB290UNE,315
Avnet Silica Trans MOSFET NCH 20V 1A 3Pin SOT883B TR (Alt: PMZB290UNE,315) RoHS: Compliant Min Qty: 20000 Package Multiple: 10000 Silica - 0
Buy Now
DISTI # PMZB290UNE,315
EBV Elektronik Trans MOSFET NCH 20V 1A 3Pin SOT883B TR (Alt: PMZB290UNE,315) RoHS: Compliant Min Qty: 10000 Package Multiple: 10000 EBV - 0
Buy Now

Part Details for PMZB290UNE,315

PMZB290UNE,315 CAD Models

PMZB290UNE,315 Part Data Attributes

PMZB290UNE,315 Nexperia
Buy Now Datasheet
Compare Parts:
PMZB290UNE,315 Nexperia PMZB290UNE - 20 V, single N-channel Trench MOSFET DFN 3-Pin
Select a part to compare:
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer NEXPERIA
Part Package Code DFN
Package Description DFN1006B-3, 3 PIN
Pin Count 3
Manufacturer Package Code SOT883B
Reach Compliance Code compliant
ECCN Code EAR99
Date Of Intro 2017-02-01
Samacsys Manufacturer Nexperia
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 20 V
Drain Current-Max (ID) 1 A
Drain-source On Resistance-Max 0.38 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PBCC-N3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style CHIP CARRIER
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Reference Standard IEC-60134
Surface Mount YES
Terminal Finish TIN
Terminal Form NO LEAD
Terminal Position BOTTOM
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

PMZB290UNE,315 Frequently Asked Questions (FAQ)

  • The recommended PCB footprint for the PMZB290UNE,315 is a standard SOT23 package with a minimum pad size of 1.3 mm x 1.3 mm and a thermal pad size of 2.5 mm x 2.5 mm.

  • To ensure the PMZB290UNE,315 operates within its SOA, follow the recommended operating conditions, derate the power dissipation according to the thermal resistance, and avoid exceeding the maximum junction temperature (Tj) of 150°C.

  • The maximum allowed voltage on the gate of the PMZB290UNE,315 is ±20 V, but it's recommended to keep it within ±10 V to ensure reliable operation and prevent damage.

  • To calculate the power dissipation of the PMZB290UNE,315, use the formula: Pd = (Vds x Ids) + (Vgs x Igs), where Vds is the drain-source voltage, Ids is the drain-source current, Vgs is the gate-source voltage, and Igs is the gate-source current.

  • The recommended storage temperature range for the PMZB290UNE,315 is -40°C to 125°C, with a relative humidity of 60% or less.