-
Part Symbol
-
Footprint
-
3D Model
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
PMXB65UPE - 12 V, P-channel Trench MOSFET@en-us DFN 3-Pin
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
PMXB65UPEZ by Nexperia is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
1727-2177-1-ND
|
DigiKey | MOSFET P-CH 12V 3.2A DFN1010D-3 Min Qty: 1 Lead time: 8 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
57939 In Stock |
|
$0.0525 / $0.3800 | Buy Now |
DISTI #
PMXB65UPEZ
|
Avnet Americas | Trans MOSFET P-CH 12V 3.2A 3-Pin DFN T/R - Tape and Reel (Alt: PMXB65UPEZ) RoHS: Compliant Min Qty: 15000 Package Multiple: 5000 Lead time: 8 Weeks, 0 Days Container: Reel | 0 |
|
$0.0525 / $0.0559 | Buy Now |
DISTI #
771-PMXB65UPEZ
|
Mouser Electronics | MOSFETs 20 V, P-channel Trench MOSFET RoHS: Compliant | 49450 |
|
$0.0520 / $0.3800 | Buy Now |
|
Future Electronics | P-Channel 12 V 3.2 A (Ta) 317 mW (Ta) Surface Mount Trench MOSFET - DFN1010D-3 RoHS: Compliant pbFree: Yes Min Qty: 15000 Package Multiple: 5000 Lead time: 8 Weeks | 0 |
|
$0.0546 / $0.0567 | Buy Now |
|
Rochester Electronics | PMXB65UPE - 12 V, P-channel Trench MOSFET RoHS: Compliant Status: Active Min Qty: 1 | 256495 |
|
$0.0446 / $0.0525 | Buy Now |
DISTI #
PMXB65UPEZ
|
TTI | MOSFETs 20 V, P-channel Trench MOSFET RoHS: Compliant pbFree: Pb-Free Min Qty: 15000 Package Multiple: 5000 Container: Reel | Americas - 0 |
|
$0.0510 | Buy Now |
DISTI #
PMXB65UPEZ
|
Avnet Asia | Trans MOSFET P-CH 12V 3.2A 3-Pin DFN T/R (Alt: PMXB65UPEZ) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 8 Weeks, 0 Days |
2000 |
|
$0.0598 / $0.0792 | Buy Now |
DISTI #
PMXB65UPEZ
|
Avnet Silica | Trans MOSFET PCH 12V 32A 3Pin DFN TR (Alt: PMXB65UPEZ) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 10 Weeks, 0 Days | Silica - 0 |
|
Buy Now | |
DISTI #
PMXB65UPEZ
|
EBV Elektronik | Trans MOSFET PCH 12V 32A 3Pin DFN TR (Alt: PMXB65UPEZ) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 10 Weeks, 0 Days | EBV - 0 |
|
Buy Now | |
|
Vyrian | Transistors | 1218481 |
|
RFQ |
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
|
PMXB65UPEZ
Nexperia
Buy Now
Datasheet
|
Compare Parts:
PMXB65UPEZ
Nexperia
PMXB65UPE - 12 V, P-channel Trench MOSFET@en-us DFN 3-Pin
Select a part to compare: |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | NEXPERIA | |
Part Package Code | DFN | |
Package Description | DFN1010D-3, 3 PIN | |
Pin Count | 3 | |
Manufacturer Package Code | SOT1215 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 8 Weeks | |
Samacsys Manufacturer | Nexperia | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 12 V | |
Drain Current-Max (ID) | 3.2 A | |
Drain-source On Resistance-Max | 0.072 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-N3 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | P-CHANNEL | |
Reference Standard | IEC-60134 | |
Surface Mount | YES | |
Terminal Finish | TIN | |
Terminal Form | NO LEAD | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |