Part Details for PMWD18UN by Philips Semiconductors
Overview of PMWD18UN by Philips Semiconductors
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- Part Data Attributes: (Available)
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Applications
Consumer Electronics
Part Details for PMWD18UN
PMWD18UN CAD Models
PMWD18UN Part Data Attributes
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PMWD18UN
Philips Semiconductors
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Datasheet
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PMWD18UN
Philips Semiconductors
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
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| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | PHILIPS SEMICONDUCTORS | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Drain Current-Max (ID) | 5 A | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-609 Code | e3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 2.3 W | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) |