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PMV40UN2 - 30 V, N-channel Trench MOSFET@en-us TO-236 3-Pin
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
52Y7630
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Newark | Mosfet, N-Ch, 30V, 4.4A, Sot-23, Channel Type:N Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:4.4A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:4.5V, Gate Source Threshold Voltage Max:650Mv Rohs Compliant: Yes |Nexperia PMV40UN2R RoHS: Compliant Min Qty: 5 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 32888 |
|
$0.1320 / $0.3880 | Buy Now |
DISTI #
86AK5981
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Newark | Mosfet, N-Ch, 30V, 4.4A, Sot-23 Rohs Compliant: Yes |Nexperia PMV40UN2R RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
|
$0.0940 / $0.1060 | Buy Now |
DISTI #
1727-1900-1-ND
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DigiKey | MOSFET N-CH 30V 3.7A TO236AB Min Qty: 1 Lead time: 8 Weeks Container: Cut Tape (CT), Digi-ReelĀ®, Tape & Reel (TR) |
395871 In Stock |
|
$0.0628 / $0.3200 | Buy Now |
DISTI #
PMV40UN2R
|
Avnet Americas | Trans MOSFET N-CH 30V 4.4A 3-Pin SOT-23 T/R - Tape and Reel (Alt: PMV40UN2R) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 8 Weeks, 0 Days Container: Reel | 24000 |
|
$0.0791 / $0.0898 | Buy Now |
DISTI #
771-PMV40UN2R
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Mouser Electronics | MOSFETs PMV40UN2/SOT23/TO-236AB RoHS: Compliant | 307099 |
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$0.0670 / $0.3200 | Buy Now |
DISTI #
E02:0323_08098941
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Arrow Electronics | Trans MOSFET N-CH 30V 3.7A 3-Pin SOT-23 T/R RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 8 Weeks Date Code: 2427 | Europe - 24000 |
|
$0.0577 / $0.0646 | Buy Now |
DISTI #
A03:0893_06246291
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Arrow Electronics | Trans MOSFET N-CH 30V 3.7A 3-Pin SOT-23 T/R RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 8 Weeks Date Code: 2412 | Asia - 18000 |
|
$0.0628 / $0.0651 | Buy Now |
DISTI #
V79:2366_28865998
|
Arrow Electronics | Trans MOSFET N-CH 30V 3.7A 3-Pin SOT-23 T/R RoHS: Compliant Min Qty: 952 Package Multiple: 1 Date Code: 2313 | Americas - 6000 |
|
$0.0669 / $0.0948 | Buy Now |
|
Future Electronics | PMV40UN2 Series 30 V 44 mOhm 3.7 A SMT N-Channel TrenchMOS FET - TO-236AB RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Lead time: 8 Weeks Container: Reel | 426000Reel |
|
$0.0539 / $0.0613 | Buy Now |
|
Future Electronics | PMV40UN2 Series 30 V 44 mOhm 3.7 A SMT N-Channel TrenchMOS FET - TO-236AB RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Lead time: 8 Weeks Container: Reel | 69000Reel |
|
$0.0540 / $0.0614 | Buy Now |
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PMV40UN2R
Nexperia
Buy Now
Datasheet
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Compare Parts:
PMV40UN2R
Nexperia
PMV40UN2 - 30 V, N-channel Trench MOSFET@en-us TO-236 3-Pin
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | NEXPERIA | |
Part Package Code | TO-236 | |
Package Description | SOT-23, 3 PIN | |
Pin Count | 3 | |
Manufacturer Package Code | SOT23 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 8 Weeks | |
Samacsys Manufacturer | Nexperia | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 3.7 A | |
Drain-source On Resistance-Max | 0.044 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 35 pF | |
JEDEC-95 Code | TO-236AB | |
JESD-30 Code | R-PDSO-G3 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 5 W | |
Pulsed Drain Current-Max (IDM) | 16 A | |
Reference Standard | IEC-60134 | |
Surface Mount | YES | |
Terminal Finish | TIN | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |