Part Details for PMT200EN by NXP Semiconductors
Overview of PMT200EN by NXP Semiconductors
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Space Technology
Environmental Monitoring
Internet of Things (IoT)
Smart Cities
Agriculture Technology
Virtual Reality (VR), Augmented Reality (AR), and Vision Systems
Medical Imaging
Consumer Electronics
Education and Research
Security and Surveillance
Aerospace and Defense
Healthcare
Robotics and Drones
Part Details for PMT200EN
PMT200EN CAD Models
PMT200EN Part Data Attributes
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PMT200EN
NXP Semiconductors
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Datasheet
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PMT200EN
NXP Semiconductors
TRANSISTOR SMALL SIGNAL, FET, FET General Purpose Small Signal
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | NXP SEMICONDUCTORS | |
| Package Description | , | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Terminal Finish | TIN |
Alternate Parts for PMT200EN
This table gives cross-reference parts and alternative options found for PMT200EN. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of PMT200EN, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRLM120A | Power Field-Effect Transistor, 2.3A I(D), 100V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | Fairchild Semiconductor Corporation | PMT200EN vs IRLM120A |
| IRLM120ATF | N-Channel A-FET 200V, 1.13A, 800mΩ, SOT-223-4 / TO-261-4, 4000-REEL | onsemi | PMT200EN vs IRLM120ATF |
| BSP372L6327HTSA1 | Power Field-Effect Transistor, 1.7A I(D), 100V, 0.31ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4 | Infineon Technologies AG | PMT200EN vs BSP372L6327HTSA1 |
| IRFL4310PBF | Small Signal Field-Effect Transistor, 1.6A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, TO-261AA, 4 PIN | International Rectifier | PMT200EN vs IRFL4310PBF |
| BSP372L6327 | Power Field-Effect Transistor, 1.7A I(D), 100V, 0.31ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4 | Infineon Technologies AG | PMT200EN vs BSP372L6327 |
| BSP372 | Power Field-Effect Transistor, 1.7A I(D), 100V, 0.31ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOT-223, 4 PIN | Infineon Technologies AG | PMT200EN vs BSP372 |
| BSP373N | Power Field-Effect Transistor, 1.8A I(D), 100V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN | Infineon Technologies AG | PMT200EN vs BSP373N |
| IRFL4310TR | Small Signal Field-Effect Transistor, 1.6A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, | International Rectifier | PMT200EN vs IRFL4310TR |
| IRLM120AS62Z | Power Field-Effect Transistor, 2.3A I(D), 100V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Fairchild Semiconductor Corporation | PMT200EN vs IRLM120AS62Z |
| SIHFL110TR-GE3 | TRANSISTOR 1500 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-4, FET General Purpose Small Signal | Vishay Siliconix | PMT200EN vs SIHFL110TR-GE3 |