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Transistors / Small Signal Field-Effect Transistors / PMR290XN,115
Datasheets
PMR290XN,115 by:
NXP Semiconductors
Nexperia
NXP Semiconductors
Not Found

N-channel TrenchMOS extremely low level FET SC-75 3-Pin

Part Details for PMR290XN,115 by NXP Semiconductors

Results Overview of PMR290XN,115 by NXP Semiconductors

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Applications Internet of Things (IoT) Smart Cities Transportation and Logistics Agriculture Technology Automotive

PMR290XN,115 Information

PMR290XN,115 by NXP Semiconductors is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for PMR290XN,115

Part # Distributor Description Stock Price Buy
Rochester Electronics Small Signal Field-Effect Transistor, 0.97A, 20V, N-Channel MOSFET, SC-75 RoHS: Compliant Status: Obsolete Min Qty: 1 150
  • 1 $0.0975
  • 25 $0.0956
  • 100 $0.0917
  • 500 $0.0877
  • 1,000 $0.0829
$0.0829 / $0.0975 Buy Now
Vyrian Transistors 31
RFQ

Part Details for PMR290XN,115

PMR290XN,115 CAD Models

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PMR290XN,115 Part Data Attributes

Parametric Data
PMR290XN,115 NXP Semiconductors
Buy Now Datasheet
Compare Parts:
PMR290XN,115 NXP Semiconductors N-channel TrenchMOS extremely low level FET SC-75 3-Pin
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Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer NXP SEMICONDUCTORS
Part Package Code SC-75
Package Description PLASTIC, SC-75, 3 PIN
Pin Count 3
Manufacturer Package Code SOT416
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.29.00.75
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 20 V
Drain Current-Max (ID) 0.97 A
Drain-source On Resistance-Max 0.35 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 0.53 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for PMR290XN,115

This table gives cross-reference parts and alternative options found for PMR290XN,115. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of PMR290XN,115, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
PMR290XN,115 Nexperia Check for Price N-channel TrenchMOS extremely low level FET@en-us SC-75 3-Pin PMR290XN,115 vs PMR290XN,115
PMR290XN Nexperia Check for Price Small Signal Field-Effect Transistor PMR290XN,115 vs PMR290XN

PMR290XN,115 Frequently Asked Questions (FAQ)

  • A good PCB layout for PMR290XN,115 involves keeping the input and output tracks separate, using a solid ground plane, and minimizing track lengths. It's also recommended to use a 4-layer PCB with a dedicated power plane and a dedicated ground plane.

  • To ensure reliable operation at high temperatures, it's essential to follow proper thermal design and layout guidelines. This includes providing adequate heat sinking, using thermal vias, and ensuring good airflow around the device. Additionally, consider using a thermal interface material (TIM) to improve heat transfer between the device and the heat sink.

  • For EMI and RFI shielding, it's crucial to use a metal shield around the PMR290XN,115, ensuring good contact between the shield and the PCB ground plane. Additionally, use a shielded cable for the input and output connections, and consider using a common-mode choke or ferrite bead to filter out high-frequency noise.

  • To optimize the PMR290XN,115 for low power consumption, consider using a low-dropout linear regulator (LDO) or a switching regulator with a high efficiency. Additionally, use a low-power mode or shutdown mode when the device is not in use, and optimize the PCB design to minimize power losses.

  • For testing and measurement, use a high-impedance probe or a differential probe to measure the output voltage and current. Ensure the measurement equipment is properly calibrated, and use a low-noise power supply to minimize interference. Additionally, consider using a load simulator or a dummy load to test the device under various load conditions.