Datasheets
PJF10N65 by: PanJit Semiconductor

Power Field-Effect Transistor, 10A I(D), 650V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, PLASTIC, ITO-220AB, 3 PIN

Part Details for PJF10N65 by PanJit Semiconductor

Overview of PJF10N65 by PanJit Semiconductor

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Part Details for PJF10N65

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PJF10N65 Part Data Attributes

PJF10N65 PanJit Semiconductor
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PJF10N65 PanJit Semiconductor Power Field-Effect Transistor, 10A I(D), 650V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, PLASTIC, ITO-220AB, 3 PIN
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer PAN JIT INTERNATIONAL INC
Part Package Code TO-220AB
Package Description FLANGE MOUNT, R-PSFM-T3
Pin Count 3
Reach Compliance Code not_compliant
ECCN Code EAR99
Avalanche Energy Rating (Eas) 750 mJ
Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 650 V
Drain Current-Max (ID) 10 A
Drain-source On Resistance-Max 1 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 40 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for PJF10N65

This table gives cross-reference parts and alternative options found for PJF10N65. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of PJF10N65, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
10N65L-TF3-T Power Field-Effect Transistor, 10A I(D), 650V, 0.86ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, TO-220F, 3 PIN Unisonic Technologies Co Ltd PJF10N65 vs 10N65L-TF3-T
TSM10NC65CFC0G Power Field-Effect Transistor, 10A I(D), 650V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ITO-220S, 3 PIN Taiwan Semiconductor PJF10N65 vs TSM10NC65CFC0G
AP2761I-A TRANSISTOR 10 A, 650 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT, TO-220CFM, 3 PIN, FET General Purpose Power Advanced Power Electronics Corp PJF10N65 vs AP2761I-A
CEF09N7G Power Field-Effect Transistor, 9A I(D), 700V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, TO-220F, 3 PIN Chino-Excel Technology Corp PJF10N65 vs CEF09N7G

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